GaN/AlGaN quantum wells for UV emission: Heteroepitaxy versus homoepitaxy

Semiconductor Science and Technology

Volumn 16, Issue 5, 2001, Pages 358-361

  Grandjean, N ^a   Massies, J ^a   Grzegory, I ^b   Porowski, S ^b  

^a CNRS   (France)

^b INSTITUTE OF HIGH PRESSURE PHYSICS   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

DISLOCATIONS (CRYSTALS); MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; QUENCHING; SAPPHIRE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; THERMAL EFFECTS;

HETEROEPITAXY; HOMOEPITAXY; NONRADIATIVE RECOMBINATION;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0035326785     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/16/5/313     Document Type: Article

References (13)