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Volumn 14, Issue 44 SPEC ISS., 2002, Pages 11055-11067

High-pressure crystallization of GaN for electronic applications

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLIZATION; DISLOCATIONS (CRYSTALS); ELECTRONIC EQUIPMENT; HIGH POWER LASERS; HIGH PRESSURE EFFECTS; LIGHT EMISSION; LIGHT EMITTING DIODES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR LASERS; SEMICONDUCTOR QUANTUM WELLS; SINGLE CRYSTALS; SUBSTRATES;

EID: 0037064942     PISSN: 09538984     EISSN: None     Source Type: Journal    
DOI: 10.1088/0953-8984/14/44/426     Document Type: Article
Times cited : (31)

References (40)
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    • IIIN w wysokim cisnieniu azotu
    • PhD Thesis Warszawa
    • IIIN w wysokim cisnieniu azotu PhD Thesis Warszawa
    • (1995)
    • Grzegory, I.1
  • 38
    • 0011892306 scopus 로고    scopus 로고
    • private communication
    • Albrecht M. 1999 private communication
    • (1999)
    • Albrecht, M.1
  • 39
    • 0011902241 scopus 로고    scopus 로고
    • private communication
    • Nakamura S. 1999 private communication
    • (1999)
    • Nakamura, S.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.