Synchrotron white beam topography characterization of physical vapor transport grown AlN and ammonothermal GaN

Journal of Crystal Growth

Volumn 246, Issue 3-4, 2002, Pages 271-280

  Raghothamachar, Balaji ^a   Vetter, William M ^a   Dudley, Michael ^a   Dalmau, Rafael ^b   Schlesser, Raoul ^b   Sitar, Zlatko ^b   Michaels, Emily ^c   Kolis, Joseph W ^c  

^a STONY BROOK UNIVERSITY   (United States)

^b North Carolina State University   (United States)

^c CLEMSON UNIVERSITY   (United States)

Author keywords

A1. Defects; A1. X ray topography; A2. Growth from vapor; A2. Single crystal growth; B1. Aluminum nitride; B1. Gallium nitride

Indexed keywords

CRYSTAL STRUCTURE; DISLOCATIONS (CRYSTALS); GALLIUM NITRIDE; OPTICAL MICROSCOPY; SINGLE CRYSTALS; SYNCHROTRON RADIATION; X RAY ANALYSIS;

X-RAY TOPOGRAPHY;

ALUMINUM NITRIDE;

EID: 0037121706     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)01751-7     Document Type: Conference Paper

References (30)

1. Van Vecten J.A. Phys. Rev. B. 7:1973;1479.
2. Slack G.A., McNelly T.F. J. Crystal Growth. 34:1976;263.
3. Slack G.A., McNelly T.F. J. Crystal Growth. 42:1977;560.
4. Rojo J.C., Slack G.A., Morgan K., Raghothamachar B., Dudley M., Schowalter L.J. J. Crystal Growth. 231:2001;317.
5. Balkas C.M., Sitar Z., Zheleva T., Bergman L., Nemanich R., Davis R.F. J. Crystal Growth. 179:1997;363.
6. Dryburgh P.M. J. Crystal Growth. 94:1989;23.
7. Segal A.S., Karpov S.Yu., Makarov Yu.N., Mokhov E.N., Roenkov A.D., Ramm M.G., Vodakov Yu.A. J. Crystal Growth. 211:2000;68.
8. Pastrnak J., Roscovkova L. Phys. Stat. Sol. 7:1964;331.
9. Schlesser R., Sitar Z. J. Crystal Growth. 234:2002;349.
10. Dugger C.O. Mater. Res. Bull. 9:1974;331.
11. Grzegory I., Jun J., Krukowski St., Bockowski M., Porowski S. Physica B. 185:1993;99.
12. Porowski S., Grzegory I. J. Crystal Growth. 178:1997;174.
13. Leszczynski M., Grzegory I., Teisseyre H., Suski T., Bockowski M., Jun J., Baranowski J.M., Porowski S., Domagala J. J. Crystal Growth. 169:1996;235.
14. Porowski S. J. Crystal Growth. 166:1996;583.
15. Karpinski J., Jun J., Porowski S. J. Crystal Growth. 66:1984;1.
16. I. Grzegory, J. Jun, St. Krukowski, M. Bockowski, S. Porowski, Physica B 185 (1993) 99.
17. Bockowski M., Wroblewski M., Lucznik B., Grzegory I. Mater. Sci. Semicond. Proc. 4:2001;543.
18. Yamane H., Shimada M., Clarke S.J., DiSalvo F.J. Chem. Mater. 9:1997;413.
19. Yano M., Okamoto M., Yap Y.K., Yoshimura M., Mori Y., Sasaki T. Diamond Relat. Mater. 9:2000;512.
20. Dwilinksi R., Baranowski J.M., Kaminska M., Doradzinski R., Garczynski J., Sierzputowski L. Acta Phys. Pol. A. 90:1996;763.
21. R. Dwilinski, R. Doradzinski, J. Garczynski, L. Sierzputowski, M. Palczewska, A. Wysmolek, M. Kaminska, MRS Internet J. Nitride Semicond. Res. 3 (1998) 25.
22. Kolis J.W., Wilcinski S.W., Laudise R.A. Mater. Res. Soc. Symp. Proc. 495:1998;367.
23. M. Dudley, Encyclopedia of Advanced Materials, Vol. 4, Pergamon Press, New York, 1994, p. 2950.
24. Schlesser R., Dalmau R., Sitar Z. J. Crystal Growth. 241:2002;416.
25. Ketchum D.R., Kolis J.W. J. Crystal Growth. 222:2001;431.
26. Klapper H. Tanner B.K., Bowen D.K. Characterization of Crystal Growth Defects by X-ray Methods. 1980;133 Plenum Press, New York.
27. B.K. Tanner, X-ray Diffraction Topography, Pergamon Press, New York, 1976, p. 14.
28. Chernov A.A. Comtemp. Phys. 30:1989;251.
29. Dudley M., Huang X.R., Huang W., Powell A., Wang S., Neudeck P., Skowronski M. Appl. Phys. Lett. 75:1999;784.
30. Lefeld-Sosnowska M., Frymark I. J. Phys. D. 34:2001;A148.