GaN growth using gallium hydride generated by hydrogenation of liquid gallium

Journal of Crystal Growth

Volumn 275, Issue 1-2, 2005, Pages

  Nagayoshi, H ^a   Nishimura, S ^c   Takeuchi, T ^c   Hirai, M ^b   Terashima, K ^b  

^a TOKYO NATIONAL COLLEGE OF TECHNOLOGY   (Japan)

^b SHONAN INSTITUTE OF TECHNOLOGY   (Japan)

^c KEIO UNIVERSITY   (Japan)

Author keywords

A2. Chemical vapor deposition processes; A2. Vapor phase epitaxy; B1. Gallium compounds; B1. Nitrides; B2. Semiconducting compounds

Indexed keywords

CATALYSTS; CHEMICAL VAPOR DEPOSITION; COSTS; HYDRIDES; HYDROGEN; HYDROGENATION; PRESSURE EFFECTS; TEMPERATURE CONTROL; TUNGSTEN; VAPOR PHASE EPITAXY;

GAS PHASE REACTION; SEMICONDUCTING COMPOUNDS; TURBO MOLECULAR PUMPS;

GALLIUM NITRIDE;

EID: 15844393866     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.11.138     Document Type: Conference Paper

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