Study of dopant activation in bulk GaN:Mg

Physica B: Condensed Matter

Volumn 308-310, Issue , 2001, Pages 47-50

  Piotrzkowski, R ^a   Litwin Staszewska, E ^a   Suski, T ^a   Grzegory, I ^a  

^a INSTITUTE OF HIGH PRESSURE PHYSICS   (Poland)

Author keywords

Annealing; GaN; Impurity and defect levels; P doping

Indexed keywords

ACTIVATION ENERGY; ANNEALING; CHEMICAL ACTIVATION; CRYSTAL DEFECTS; CRYSTAL GROWTH; IMPURITIES; MAGNESIUM PRINTING PLATES; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DOPING; THERMAL EFFECTS;

DOPANT ACTIVATION;

GALLIUM NITRIDE;

EID: 0035671564     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-4526(01)00665-2     Document Type: Article

References (3)