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Volumn 230, Issue 3-4, 2001, Pages 368-371

Optical and electrical properties of Be doped GaN bulk crystals

(10) Suski, T a Litwin Staszewska, E a Perlin, P a Wisniewski, P a Teisseyre, H a Grzegory, I a Bockowski, M a Porowski, S a Saarinen, K b Nissila J b

a INSTITUTE OF HIGH PRESSURE PHYSICS (Poland)

b AALTO UNIVERSITY (Finland)

Author keywords

A1. Doping; A2. Single crystal growth; B1. Nitrides; B2. Semiconducting III V materials

Indexed keywords

ACTIVATION ENERGY; BERYLLIUM; ELECTRIC CONDUCTIVITY MEASUREMENT; GALLIUM NITRIDE; MORPHOLOGY; PHOTOLUMINESCENCE; POSITRON ANNIHILATION SPECTROSCOPY; SEMICONDUCTOR DOPING; SINGLE CRYSTALS; SYNTHESIS (CHEMICAL);

SINGLE CRYSTAL GROWTH;

CRYSTAL GROWTH;

EID: 0035451648 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(01)01268-4 Document Type: Article

Times cited : (15)

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