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Volumn 274, Issue 1-2, 2005, Pages 55-64
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Gallium nitride growth on sapphire/GaN templates at high pressure and high temperatures
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Author keywords
A2. High pressure growth from solution; A2. Seeded growth; B2. Gallium nitride
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Indexed keywords
DISLOCATION DENSITY;
GROWTH RATES;
HIGH-PRESSURE GROWTH FROM SOLUTION;
SEEDED GROWTH;
COALESCENCE;
CRYSTAL GROWTH;
CRYSTALLIZATION;
ETCHING;
MELTING;
METALLORGANIC CHEMICAL VAPOR DEPOSITION;
SAPPHIRE;
TRANSMISSION ELECTRON MICROSCOPY;
X RAY DIFFRACTION ANALYSIS;
GALLIUM NITRIDE;
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EID: 19944419760
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/j.jcrysgro.2004.09.083 Document Type: Article |
Times cited : (22)
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References (7)
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