Growth of bulk GaN single crystals by the pressure-controlled solution growth method

Journal of Crystal Growth

Volumn 229, Issue 1, 2001, Pages 35-40

  Inoue, T ^a   Seki, Y ^a   Oda, O ^a,c   Kurai, S ^b   Yamada, Y ^b   Taguchi, T ^b  

^a JAPAN ENERGY CORPORATION   (Japan)

^b YAMAGUCHI UNIVERSITY   (Japan)

^c NGK INSULATORS LTD   (Japan)

Author keywords

A1. Substrates; A1. Super saturated solutions; A2. Growth from high temperature solutions; B1. Gallium compounds; B1. Nitrides; B2. Semiconducting III V materials

Indexed keywords

CRYSTAL GROWTH; GALLIUM NITRIDE; GRAIN BOUNDARIES; HIGH TEMPERATURE EFFECTS; MORPHOLOGY; NITROGEN; PRESSURE EFFECTS; SEMICONDUCTOR GROWTH; SINGLE CRYSTALS; TRANSMISSION ELECTRON MICROSCOPY;

PRESSURE-CONTROLLED SOLUTION GROWTH (PC-SG);

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0035398736     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)01046-6     Document Type: Article

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