Growth and doping of GaN and AlN single crystals under high nitrogen pressure

Crystal Research and Technology

Volumn 36, Issue 8-10, 2001, Pages 771-787

  Bockowski, M ^a  

^a INSTITUTE OF HIGH PRESSURE PHYSICS   (Poland)

Author keywords

AlN; Crystal growth from solution; GaN; High Nitrogen Pressure Solution Growth (HNPSG) method; High pressure; Substrates

Indexed keywords

CRYSTAL GROWTH; GALLIUM NITRIDE; HIGH PRESSURE EFFECTS; SEMICONDUCTING ALUMINUM COMPOUNDS; SUPERSATURATION;

HIGH NITROGEN PRESSURE SOLUTION GROWTH (HNPSG) METHOD;

SINGLE CRYSTALS;

EID: 0035162032     PISSN: 02321300     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-4079(200110)36:8/10<771::AID-CRAT771>3.0.CO;2-J     Document Type: Conference Paper

References (43)

1. BALKAS, C. M., SITAR, Z., ZHELEVA, T., BERGMAN, L., SHMAGIN, I. K., MUTH, J.F., KOLBAS, R., NEMANICH, R., DAVIS, R. F.: Mater. Res. Soc. Symp. Proc. 449 (1997) 41
2. BOCKOWSKI, M., JUN, J., GRZEGORY, I., AYRAL-MARIN, R-M., TEDENAC, J. C.: Ceramica Acta 6 (1994) 33
3. BOCKOWSKI M., WITEK A., KRUKOWSKI S., WROBLEWSKI, M., POROWSKI, S., MARIN-AYRAL, R-M., TEDENAC, J. C.: J. Mater. Synth. Process. 5 (1997) 449
4. BOGUSLAWSKI, P., BRIGGS, E., BERNHOLTZ, J.: Phys. Rev. B 51 (1995) 17255
5. CLASS, W.: Contract Rep. NASA-Cr-1171 (1968)
6. GRZEGORY, I.: Mater Sci & Engg B (2001), in press
7. KARPINSKI, J., JUN, J., POROWSKI, S.: J. Cryst Growth 66 (1984) 1
8. KLEMENTZ, C., SCHEEL, H. J.: J. Cryst Growth 211 (2000) 62
9. KRUKOWSKI, S.: Cryst. Res. Technol. 34 (1999) 785
10. KRUKOWSKI, S., ROMANOWSKI, Z., GRZEGORY, I., POROWSKI, S.: J. Cryst Growth 175 (1998) 159
11. KRUKOWSKI, S., BOCKOWSKI, M., LUCZNIK, B., GRZEGORY, I., POROWSKI, S., SUSKI, T., ROMANOWSKI, Z.: J. Phys Condensed Matter, in press
12. LEROUX, M., GIL, B.: in: Properties, Processing and Aplications of Gallium Nitride and Related Semiconductors, (Eds) J.H. Edgar, S.T. Strite, I. Akasaki, H. Amano and Ch. Wetzel, EMIS Datareviews Series No 23 (1999) 58
13. LESZCZYNSKI, M., GRZEGORY, I., TEISSEYRE, H., SUSKI, T., BOCKOWSKI, M., JUN, J., BARANOWSKI, J. M., POROWSKI, S., DOMAGALA, J.: J. Cryst Growth 169 (1996) 235
14. LESZCZYNSKI, M.: private communication (2000)
15. LESZCZYNSKI, M.: private communication (2001)
16. LILIENTAL-WEBER, Z.: in: Properties, Processing and Applications of Gallium Nitride and Related Semiconductors, (Eds) J.H. Edgar, S.T. Strite, I. Akasaki, H. Amano and Ch. Wetzel, EMIS Datareviews Series No 23 (1999) 230
17. LITWIN-STASZEWSKA, E., SUSKI, T., PIOTRZKOWSKI, R., GRZEGORY, I., BOCKOWSKI, M., ROBERT, J-L., KONCZEWICZ, L., WASIK, D., KAMINSKA, M., COTE, D., CLERJAUD, B.: J. Appl. Phys, in press
18. MELNIK, Y., VASSILEVSKI, K., NIKITINA, I., BABANIN, A., DAVYDOV, V., DMITRIEV, V.: MRS Internet J. Nitride Semicond. Res. 2 (1997) 39
19. NAKAMURA, S.: private communication (1999)
20. NAKAMURA, S.: IEICE Trans. Electron., Vol. E83-C. No. 4 (2000) 529
21. NEUGEBAUER, J., VAN DE WALLE, C. G.: Phys. Rev. B 50 (1994) 8067
22. NIKOLAEV, A., NIKITINA, I., ZUBRILOV, A., MYNBAEVA, M., MELNIK Y, DMITRIEV, V: Mater. Res. Soc. Symp. Vol. 595 (2000) W6.5.1
23. PERLIN, P., CAMASEL, J., KNAP, W., TALERCIO, T., CHERVIN, J. C., SUSKI, T., GRZEGORY, I., POROWSKI, S.: Appl. Phys. Lett. 67 (1996) 917
24. POROWSKI, S., GRZEGORY, I.: in: Properties of Group III Nitrides, (Ed) J. H. Edgar, EMIS Datareview Series No 7 (1994) 71
25. POROWSKI, S., GRZEGORY, I.: J. Cryst Growth 178 (1997) 174
26. POROWSKI, S., BOCKOWSKI, M., LUCZNIK, B., GRZEGORY, I., WROBLEWSKI, M., TEISSEYRE, H., LESZCZYNSKI, M., LITWIN-STASZEWSKA, E., SUSKI, T., TRAUTMAN, P., PAKULA, K., BARANOWSKI, J. M.: Acta Phys. Pol. A 92 (1997) 958
27. POROWSKI, S.: MRS Internet J. Nitride Semicond. Res. 4S1 (1999) G1.3
28. SAARINEN, K. LAINE, T., KUISMA, S., HAUTOJARVI, P., DOBRZYNSKI, L., BARANOWSKI, J. M., PAKULA, K., STEPNIEWSKI, R., WOJDAK, M., WYSMOLEK, A., SUSKI, T., LESZCZYNSKI, M., GRZEGORY, I., POROWSKI, S.: Phys. Rev. Lett. 79 (1997) 3030
29. SAARINEN, K., NISSILA, J., HAUTOJARVI, P., LIKONEN, J., SUSKI, T., GRZEGORY, I., LUCZNIK, B., POROWSKI, S.: Appl. Phys. Lett. 75 (1999) 2441
30. SCHOWALTER, L.J., ROJO, J.C., SLACK, G. A., SHUSTERMAN, S. Y., WANG, R., BATH, I., ARUNMOZHI, G.: J. Cryst Growth 211 (2000) 78
31. SEELMANN-EGGEBERT, M., WEYHER, J. L., OBLOH, H., ZIMMERMANN, H., RAR, A., POROWSKI, S.: Appl. Phys. Lett. 71 (1997) 18
32. SEGAL, A.S., KARPOV, S.Yu., MAROV, Yu.N., MOKHOV, E.N., ROENKOV, A.D., RAMM, M.G., VODAKOV Yu.A.: J. Cryst Growth 211 (2000) 68
33. SLACK, G. A., MCNELLY, T. F.: J. Cryst Growth 34 (1976) 263
34. SLACK, G. A., MCNELLY, T. F.: J. Cryst Growth 42 (1977) 560
35. SLACK, G. A.: Mater. Res. Soc. Symp. Proc. 512 (1998) 35
36. SUKHOVEYEV, V. A., IVANTSOV, V. A., NIKITINA, I. P., BABANIN, A. I., POLYAKOV, A. Y., GOVORKOV, A. V., SMIRNOV, N. B., MIL'VIDSKII, M. G., DMITRIEV, V. A.: Mater. Res. Soc. Symp. 595 (2000) W6.6.1
37. SUSKI, T., LITWIN-STASZEWSKA, E., PERLIN, P., WISNIEWSKI, P., TEISSEYRE, H., GRZEGORY, I., BOCKOWSKI, M., POROWSKI, S., SAARINEN, K., NISSILA, J.: EGW-4 Proceedings (2000), in press
38. TANAKA, M., NAKAHATA, S., SOGABE, K., NAKATA, H., TOBIOKA, M.: Jpn. J.Appl. Phys. Vol. 36 (1997) 1062
39. USUI, A., SUNAKAWA, H., SAKAI, A., YAMAGUCHI, A.: Jpn. J. Appl. Phys., Part 2 36 (1997) L899
40. VAN DE WALLE, C. G., NEUGEBAUER, J.: in: Properties, Processing and Aplications of Gallium Nitride and Related Semiconductors, (Eds) J.H. Edgar, S.T. Strite, I. Akasaki, H. Amano and Ch. Wetzel, EMIS Datareviews Series No 23 (1999) 313
41. VAN VECHTEN, J. A.: Phys. Rev. B 7 (1973) 1479
42. WEYHER, J.L., MULLER, S., GRZEGORY, I., POROWSKI, S.: J. Cryst Growth 182 (1997) 17
43. WEYHER, L.J., BROWN, P.D., ROUVIERE, J.L., WOSINSKI, T., ZAUNER, R. A., GRZEGORY, I.: J. Cryst Growth 210 (2000) 151