Congruent melting of gallium nitride at 6 GPa and its application to single-crystal growth

Nature Materials

Volumn 2, Issue 11, 2003, Pages 735-738

  Utsumi, Wataru ^a   Saitoh, Hiroyuki ^a   Kaneko, Hiroshi ^a   Watanuki, Tetsu ^a   Aoki, Katsutoshi ^a   Shimomura, Osamu ^a  

^a JAPAN SYNCHROTRON RADIATION RESEARCH INSTITUTE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COOLING; CRYSTAL GROWTH; CRYSTAL STRUCTURE; CRYSTALLIZATION; DECOMPOSITION; MELTING; SINGLE CRYSTALS; STOICHIOMETRY; SYNTHESIS (CHEMICAL); THERMAL EFFECTS; VAPOR PHASE EPITAXY; X RAY DIFFRACTION ANALYSIS;

CONGRUENT MELTING; WURTZITE STRUCTURE;

GALLIUM NITRIDE;

EID: 0242667777     PISSN: 14761122     EISSN: None     Source Type: Journal    
DOI: 10.1038/nmat1003     Document Type: Letter

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