Gallium imide, {Ga(NH)3/2}n, a new polymeric precursor for gallium nitride powders

Chemistry of Materials

Volumn 8, Issue 12, 1996, Pages 2708-2711

  Janik, Jerzy F ^a,b   Wells, Richard L ^a  

^a DUKE UNIVERSITY   (United States)

^b AGH UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0007884428     PISSN: 08974756     EISSN: None     Source Type: Journal    
DOI: 10.1021/cm960419h     Document Type: Article

References (22)

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17. -1) 3140 (m, br), 1500 (m, br), 1309 (vw), 979 (s, br), 560 (vs, br); EA (%): Ga, 68.82; N, 22.06; C, 3.65; H, 2.17; N/Ga = 1.60/1.00; H/N = 1.36/1.00.
18. -1) 3130 (m, br), 1631 (vw), 1516 (m, br), 1310 (vw), 985 (m, br), 569 (vs, br); TGA (weight loss): 30-240 °C, 4.6%; 240-450 °C, 0.3%; total, 4.9% (gray-yellow residue).
19. (a) Kouvetakis, J.; Beach, D. B. Chem. Mater. 1989, 1, 476.
20. (b) Durig, J. R.; Bradley, C. B.; Odom, J. D. Inorg. Chem. 1982, 21, 1466.
21. -1) 3200 (w, br), 984 (m, br), 570 (vs, br); XRD (Figure IB); TEM image and electron diffraction pattern (Figure 2B).
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