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Materials Science and Engineering B

Volumn 44, Issue 1-3, 1997, Pages 407-413

Growth and properties of single crystalline GaN substrates and homoepitaxial layers

(1) Porowski, S a

a INSTITUTE OF HIGH PRESSURE PHYSICS (Poland)

Author keywords

Gallium nitride substrate; Homoepitaxial layer; III V nitrides

Indexed keywords

COMPOSITION EFFECTS; CRYSTAL GROWTH; CRYSTALLIZATION; ELECTRIC PROPERTIES; EPITAXIAL GROWTH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NUCLEATION; OPTICAL PROPERTIES; SEMICONDUCTOR GROWTH; SINGLE CRYSTALS; SUBSTRATES; THERMODYNAMIC PROPERTIES;

GALLIUM NITRIDE;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0000170076 PISSN: 09215107 EISSN: None Source Type: Journal
DOI: 10.1016/S0921-5107(96)01730-8 Document Type: Article

Times cited : (56)

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