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Materials Science and Engineering: B

Volumn 82, Issue 1-3, 2001, Pages 30-34

High nitrogen pressure growth of GaN crystals and their applications for epitaxy of GaN - Based structures

(1) Grzegory, I a

a INSTITUTE OF HIGH PRESSURE PHYSICS (Poland)

Author keywords

GaN homoepitaxy; Pressure grown GaN crystals

Indexed keywords

ATOMIC FORCE MICROSCOPY; DISLOCATIONS (CRYSTALS); METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; SEMICONDUCTOR GROWTH; SINGLE CRYSTALS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

HOMOEPITAXY; PRESSURE GROWN CRYSTALS;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0035933082 PISSN: 09215107 EISSN: None Source Type: Journal
DOI: 10.1016/S0921-5107(00)00786-8 Document Type: Article

Times cited : (16)

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