Optical characterization of bulk GaN grown by a Na-Ga melt technique

Journal of Crystal Growth

Volumn 246, Issue 3-4, 2002, Pages 299-306

  Skromme, B J ^a   Palle, K ^a   Poweleit, C D ^b   Yamane, H ^c   Aoki, M ^c   DiSalvo, F J ^d  

^a Arizona State University   (United States)

^b ARIZONA STATE UNIVERSITY   (United States)

^c TOHOKU UNIVERSITY   (Japan)

^d Department of Obstetrics Gynecology   (United States)

Author keywords

A1. Impurities; A1. Optical characterization; A2. Growth from solutions; A2. Single crystal growth; B1. Nitrides; B2. Semiconducting III V materials

Indexed keywords

BINDING ENERGY; CHARACTERIZATION; ELECTRON TRANSITIONS; PHONONS; PHOTOLUMINESCENCE; RAMAN SCATTERING; SINGLE CRYSTALS;

OPTICAL CHARACTERIZATION;

GALLIUM NITRIDE;

EID: 0037121693     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)01754-2     Document Type: Conference Paper

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