Seeded growth of GaN at high N2 pressure on (0 0 0 1) polar surfaces of GaN single crystalline substrates

Materials Science in Semiconductor Processing

Volumn 4, Issue 6, 2001, Pages 535-541

  Grzegory, I ^a   Bockowski M ^c   Lucznik B ^c   Wroblewski M ^c   Teisseyre, H ^c   Borysiuk, J ^b   Porowski, S ^c  

^a INSTITUTE OF HIGH PRESSURE PHYSICS   (Poland)

^b UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

^c NONE

Author keywords

GaN single crystals; High pressure solution growth; Seeded growth of GaN

Indexed keywords

ANISOTROPY; CRYSTAL DEFECTS; EPITAXIAL GROWTH; NITROGEN; NUCLEATION; PRESSURE EFFECTS; SINGLE CRYSTALS; SUBSTRATES; SUPERCOOLING;

SEEDED GROWTH;

GALLIUM NITRIDE;

EID: 0035573610     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1369-8001(02)00013-6     Document Type: Conference Paper

References (13)

1. The role of threading dislocations in the physical properties of GaN and its alloys
2. Selective area growth and epitaxial lateral overgrowth of GaN
3. Mechanisms of dislocation termination in GaN thin films by anti-surfactant mediated epitaxy
4. Growth of self-seeded aluminum nitride by sublimation-recondensation and substrate preparation
5. Growth of high purity AlN crystals
6. GaN crystals grown from a liquid phase at reduced pressure
7. Structure and optical properties of GaN bulk crystals grown from the liquid phase
8. Growth of bulk GaN single crystals by the pressure controlled solution method
9. GaN crystals - Growth and doping under pressure
10. Chemical polishing of bulk and epitaxial GaN
11. High pressure fabrication and processing of GaN:Mg