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MRS Internet Journal of Nitride Semiconductor Research

Volumn 4, Issue SUPPL. 1, 1999, Pages

Near defect free GaN substrates

(1) Porowski, S a

a INSTITUTE OF HIGH PRESSURE PHYSICS (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; CRYSTALLOGRAPHY; CRYSTALS; DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; LIGHT EMITTING DIODES; NITROGEN; OPTOELECTRONIC DEVICES; PRESSURE EFFECTS; SEMICONDUCTOR DOPING; SEMICONDUCTOR INSULATOR BOUNDARIES;

EPITAXIAL LATERAL OVERGROWTH (ELOG); GALLIUM NITRIDE SUBSTRATES; HOMOEPITAXIAL LAYERS; SEMIINSULATING(SI) CRYSTALS;

GALLIUM NITRIDE;

EID: 3442898297 PISSN: 10925783 EISSN: None Source Type: Journal
DOI: 10.1557/s1092578300002210 Document Type: Conference Paper

Times cited : (14)

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