Extended defects in GaN single crystals

Journal of Physics D: Applied Physics

Volumn 34, Issue 10 SPEC. ISS. A, 2001, Pages

  Lefeld Sosnowska, M ^a   Frymark, I ^a  

^a UNIVERSITY OF WARSAW   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL LATTICES; GRAIN BOUNDARIES; HIGH PRESSURE EFFECTS; HIGH TEMPERATURE EFFECTS; SEMICONDUCTING GALLIUM COMPOUNDS; X RAY DIFFRACTION ANALYSIS;

PROJECTION TOPOGRAPHY;

SINGLE CRYSTALS;

EID: 0035926713     PISSN: 00223727     EISSN: None     Source Type: Journal    
DOI: 10.1088/0022-3727/34/10a/331     Document Type: Article

References (9)

1. Qian W, Skowroński M, De Graef M, Doverspike K, Rowland L B and Gaskill D K 1995 Appl. Phys. Lett. 66 1252
2. Wu X H, Brown L M, Kapolnek D, Keller S, Keller B, DenBaars S P and Speck J S 1996 J. Appl. Phys. 80 3228
3. Ruterana P, Potin V, Nouet G, Bonnet R and Loubradou M 1999 Mater. Res. Eng. B 59 177
4. Hino T, Tomiya S, Miyajima T, Yanashima K, Hashimoto S and Ikeda M 2000 Appl. Phys. Lett. 76 3421
5. Porowski S, Grzegory I and Jun J 1989 High Pressure Chemical Synthesis ed J Jurczak and B Baranowski (Amsterdam: Elsevier) p 21
6. Leszczynski M, Grzegory I, Teisseyre H, Suski T, Boćkowski M, Jun J, Baranowski J M, Porowski S and Domagała J 1996 J. Crystal Growth 169 235
7. Grzegory I and Porowski S 2000 Thin Solid Films 367 281
8. Rai R S, Singh G and Sen Gupta S P 1983 J. Crystal Growth 61 170
9. Klapper H and Küppers H 1973 Acta Crystallogr. A 29 495