Growth of bulk Ga1-xMnxN single crystals

Journal of Crystal Growth

Volumn 233, Issue 4, 2001, Pages 631-638

  Szyszko, Tomasz ^a   Kamler, Grzegorz ^a   Strojek, Beata ^a   Weisbrod, Grzegorz ^a   Podsiadło, Sławomir ^a   Adamowicz, Leszek ^a   Gȩbicki, Wojciech ^a   Szczytko, Jacek ^b   Twardowski, Andrzej ^b   Sikorski, Krzysztof ^c  

^a WARSAW UNIVERSITY OF TECHNOLOGY   (Poland)

^b UNIVERSITY OF WARSAW   (Poland)

^c Materials Science and Engineering Faculty   (Poland)

Author keywords

A1. Raman spectra; A2. single crystal growth; A3. vapor phase epitaxy; B1. gallium manganese nitride

Indexed keywords

ANNEALING; COMPOSITION EFFECTS; CRYSTAL GROWTH; CRYSTAL STRUCTURE; DOPING (ADDITIVES); GALLIUM NITRIDE; MANGANESE; PARAMAGNETISM; RAMAN SPECTROSCOPY; SQUIDS; THERMAL EFFECTS; VAPOR PHASE EPITAXY;

ELECTRON MICROPROBE METHODS;

SINGLE CRYSTALS;

EID: 0035546462     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)01593-7     Document Type: Article

References (12)