Growth of GaN on patterned GaN/sapphire substrates by high pressure solution method

Journal of Crystal Growth

Volumn 281, Issue 1, 2005, Pages 11-16

  Bockowski M ^a   Grzegory, I ^a   Borysiuk, J ^a   Kamler, G ^a   Lucznik B ^a   Wroblewski M ^a   Kwiatkowski, P ^a   Jasik, K ^a   Krukowski, S ^a   Porowski, S ^a  

^a INSTITUTE OF HIGH PRESSURE PHYSICS   (Poland)

Author keywords

A2. High pressure growth from solution; A2. Seeded growth; A3. Lateral overgrowth; B1. Gallium nitride

Indexed keywords

CRYSTAL GROWTH; CRYSTALLIZATION; DISLOCATIONS (CRYSTALS); METALLORGANIC CHEMICAL VAPOR DEPOSITION; SAPPHIRE; SINGLE CRYSTALS; SUPERCOOLING;

DIRECTIONAL CRYSTALLIZATION; HIGH-PRESSURE GROWTH FROM SOLUTIONS; LATERAL OVERGROWTH; SEEDED GROWTH;

GALLIUM NITRIDE;

EID: 20744435043     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2005.03.008     Document Type: Conference Paper

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