Enhanced functionality in GaN and SiC devices by using novel processing

Solid-State Electronics

Volumn 48, Issue 10-11 SPEC. ISS., 2004, Pages 1965-1974

  Pearton, S J ^a   Abernathy, C R ^a   Gila, B P ^a   Ren, F ^a   Zavada, J M ^b   Park, Y D ^c  

^a University of Florida   (United States)

^b U S ARMY RESEARCH OFFICE   (United States)

^c Seoul National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CARRIER CONCENTRATION; FERROMAGNETISM; IMPURITIES; ION IMPLANTATION; LIGHT EMISSION; LIGHT POLARIZATION; MAGNETIC DEVICES; MAGNETIC SEMICONDUCTORS; PASSIVATION; PLASMA ETCHING; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR MATERIALS; SILICON CARBIDE; SURFACE PHENOMENA; TRANSITION METALS;

LASER DRILLING; NOVEL OXIDES; POLARIZED LIGHT EMITTERS; SCHOTTKY DIODES; SURFACE PASSIVANTS;

SOLID STATE DEVICES;

EID: 3142741897     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2004.05.061     Document Type: Conference Paper

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