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Journal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films

Volumn 20, Issue 3, 2002, Pages 721-724

Characterization of high dose Mn, Fe, and Ni implantation into p-GaN

(16) Pearton, S J a Overberg, M E a Thaler, G a Abernathy, C R a Theodoropoulou, N b Hebard, A F b Chu, S N G c Wilson, R G d Zavada, J M e Polyakov, A Y f Osinsky, A V g Norris, P E g Chow, P P h Wowchack, A M h Van Hove, J M g Park, Y D i

a University of Florida (United States)

b Agere Systems ^* (United States)

c AGERE SYSTEMS (United States)

d Institute of Rare Metals ^*

e U S ARMY RESEARCH OFFICE (United States)

f INSTITUTE OF RARE METALS (Russian Federation)

g Seoul National University ^* (United States)

h SVT ASSOCIATES (United States)

i Seoul National University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CARRIER CONCENTRATION; CHARACTERIZATION; FERROMAGNETISM; ION IMPLANTATION; IRON; MANGANESE; NICKEL; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

HOLE CONCENTRATION; REACTIVE ION MOLECULAR BEAM EPITAXY; SECONDARY PHASE FORMATION; SELECTED AREA DIFFRACTION PATTERN ANALYSIS;

SEMICONDUCTOR SUPERLATTICES;

EID: 0036565364 PISSN: 07342101 EISSN: None Source Type: Journal
DOI: 10.1116/1.1465449 Document Type: Article

Times cited : (24)

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