7.5kW/mm2 current switch using AlGaN/GaN metal-oxide-semiconductor heterostructure field effect transistors on SiC substrates

Electronics Letters

Volumn 36, Issue 24, 2000, Pages 2043-2044

  Simin, G ^a   Hu, X ^a   Ilinskaya, N ^a   Kumar, A ^a   Koudymov, A ^a   Zhang, J ^a   Asif Khan, M ^a   Gaska, R ^b   Shur, M S ^b,c  

^a University of South Carolina   (United States)

^b SENSOR ELECTRONIC TECHNOLOGY INC   (United States)

^c RENSSELAER POLYTECHNIC INSTITUTE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

METAL OXIDE SEMICONDUCTOR HETEROSTRUCTURE FIELD EFFECT TRANSISTOR; PULSE RESPONSE; SOLID STATE SWITCH;

CARRIER CONCENTRATION; ELECTRODES; HALL EFFECT; HETEROJUNCTIONS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR SWITCHES; SILICON CARBIDE; SUBSTRATES;

MOSFET DEVICES;

EID: 0034318117     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20001401     Document Type: Article

References (11)

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