Magnetic and structural properties of Mn-implanted GaN

Applied Physics Letters

Volumn 78, Issue 22, 2001, Pages 3475-3477

  Theodoropoulou, N ^a   Hebard, A F ^a   Overberg, M E ^b   Abernathy, C R ^b   Pearton, S J ^b   Chu, S N G ^c   Wilson, R G ^d  

^a University of Florida ^*  (United States)

^b University of Florida   (United States)

^c LUCENT TECHNOLOGIES   (United States)

^d NONE

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035926865     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1376659     Document Type: Article

References (26)

1. D. D. Awschalom and J. M. Kikkawa, Phys. Today 523, 33 (1999).
2. J. M. Kikkawa and D. D. Awschalom, Science 287, 473 (2000).
3. G. A. Prinz, Science 282, 1660 (1998).
4. B. T. Jonker, Y. D. Park, B. R. Bennett, H. D. Cheong, G. Kioseoglou, and A. Petrov, Phys. Rev. B 62, 8180 (2000).
5. Y. D. Park, B. T. Jonker, B. R. Bennett, G. Itskos, M. Furis, G. Kioseoglou, and A. Petrov, Appl. Phys. Lett. 77, 3989 (2000).
6. F. Feiderling, M. Kelm, G. Reuscher, W. Ossau, G. Schmidt, and A. Waag, Nature (London) 402, 787 (1999).
7. Y. Ohno, D. K. Young, B. Beschoten, F. Matsukura, H. Ohno, and D. D. Awschalom, Nature (London) 402, 790 (1999).
8. An early review of the field is given in F. Holtzberg, S. von Molnar, and J. M. D. Coey, Handbook of Semiconductors, edited by S. P. Keller (North-Holland, Amsterdam, 1980), Vol. 3.
9. An early review of the field is given in F. Holtzberg, IEEE Spectrum 37, 33 (2000); J. Vac. Sci. Technol. A 16, 1806 (1998).
10. An early review of the field is given in F. Holtzberg, IEEE Spectrum 37, 33 (2000); J. Vac. Sci. Technol. A 16, 1806 (1998).
11. H. Ohno, J. Magn. Magn. Mater. 200, 110 (1999).
12. J. Konig, H. H. Lin, and A. H. MacDonald, Phys. Rev. Lett. 84, 5628 (2000).
13. T. Diehl, H. Ohno, F. Matsukura, J. Cibert, and D. Ferrand, Science 287, 1019 (2000).
14. W. Gebicki, J. Strzeszewski, G. Kamler, T. Szczyko, and S. Podsiado, Appl. Phys. Lett. 76, 3870 (2000).
15. M. Zajac, R. Doradzinski, J. Gosk, T. Szezyko, M. Palczewska, G. Grzanka, M. Lefeld-Sosnowska, W. Gebicki, M. Kaminska, and T. Twardowski, Appl. Phys. Lett. 78, 1276 (2001).
16. T. Szyszko, G. Kamler, B. Strojek, G. Weisbrod, S. Podsicask, L. Adamowicz, W. Gebicki, A. Twardowski, J. Szeztko, and K. Sikorski (to be published).
17. S. O. Kucheyev, J. S. Williams, J. Zou, C. Jagadish, and G. Li, Appl. Phys. Lett. 77, 3577 (2000).
18. S. O. Kucheyev, J. W. Williams, C. Jagadish, V. S. J. Craig, and G. Li, Appl. Phys. Lett. 78, 1373 (2001).
19. S. O. Kucheyev, J. S. Williams, C. Jagadish, J. Zou, and G. Li, Phys. Rev. B 62, 7510 (2000).
20. J. Shi, J. M. Kikkawa, R. Proksch, T. Schaeffer, and D. D. Awschalom, Nature (London) 377, 707 (1995).
21. J. Shi, J. M. Kikkawa, D. D. Awschalom, G. Medeiro-Riberio, D. M. Petroff, and K. Babcock, J. Appl. Phys. 79, 5296 (1996).
22. J. DeBroeck, R. Osterholt, A. Van Euch, H. Bender, C. Brynseraede, C. Van Hoof, and G. Borghs, Appl. Phys. Lett. 68, 2744 (1996).
23. P. J. Wellman, J. M. Garcia, J. L. Feng, and P. M. Petroff, Appl. Phys. Lett. 71, 2532 (1997).
24. C. Chen, M. Cai, X. Wang, S. Xu, M. Zhang, X. Ding, and Y. Sun, J. Appl. Phys. 87, 5636 (2000).
25. H. Akinaga, S. Miyaniski, K. Tanaka, W. Van Roy, and K. Onodera, Appl. Phys. Lett. 76, 97 (2000).
26. S. N. G. Chu, J. Appl. Phys. 66, 520 (1989).