High-Electron-Mobility AlGaN/GaN Transistors (HEMTs) for Fluid Monitoring Applications

Physica Status Solidi (A) Applied Research

Volumn 185, Issue 1, 2001, Pages 85-89

  Neuberger, R ^a   Muller G ^a   Ambacher, O ^b   Stutzmann, M ^b  

^a AIRBUS GROUP INNOVATIONS   (Germany)

^b WALTER SCHOTTKY INSTITUT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 18044402181     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-396X(200105)185:1<85::AID-PSSA85>3.0.CO;2-U     Document Type: Article

References (13)

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