Optical and magnetic measurements of p-type GaN epilayers implanted with Mn+ ions

Applied Physics Letters

Volumn 81, Issue 10, 2002, Pages 1845-1847

  Shon, Yoon ^a   Kwon, Young Hae ^a   Yuldashev, Sh U ^a   Leem, J H ^a   Park, C S ^a   Fu, D J ^a   Kim, H J ^a   Kang, T W ^a   Fan, X J ^b  

^a Dongguk University   (South Korea)

^b WUHAN UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

FERROMAGNETIC BEHAVIORS; FERROMAGNETIC HYSTERESIS LOOPS; GAN EPILAYERS; P-TYPE GAN; PHOTOLUMINESCENCE MEASUREMENTS; PHOTOLUMINESCENCE PEAK; TEMPERATURE DEPENDENT;

EPILAYERS; FERROMAGNETIC MATERIALS; FERROMAGNETISM; GALLIUM NITRIDE; IONS; MAGNETIC VARIABLES MEASUREMENT; MANGANESE COMPOUNDS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE;

MANGANESE;

EID: 79958222231     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1506778     Document Type: Article

References (6)

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