GaN-based heterostructures for sensor applications

Diamond and Related Materials

Volumn 11, Issue 3-6, 2002, Pages 886-891

  Stutzmann, M ^a   Steinhoff, G ^a   Eickhoff, M ^a   Ambacher, O ^a   Nebel, C E ^a   Schalwig, J ^b   Neuberger, R ^b   Muller G ^b  

^a WALTER SCHOTTKY INSTITUT   (Germany)

^b AIRBUS GROUP INNOVATIONS   (Germany)

Author keywords

Applications; Bidimensional electron gas; Gallium nitride; Interface

Indexed keywords

ADSORPTION; BIOSENSORS; BOUNDARY CONDITIONS; ELECTRON GAS; HETEROJUNCTIONS; POLARIZATION;

MECHANICAL STRAIN;

GALLIUM NITRIDE;

GALLIUM NITRIDE;

DIAMOND; GALLIUM; HIGH TEMPERATURE; HIGH TEMPERATURE APPLICATION; INDUSTRIAL APPLICATION; MECHANICAL PROPERTY; SENSOR;

BIOSENSOR; ELECTRICITY; HETEROSTRUCTURE; MECHANICAL STRESS; SENSITIVITY ANALYSIS;

EID: 0036508494     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-9635(02)00026-2     Document Type: Article

References (19)