dc and rf performance of proton-irradiated AlGaN/GaN high electron mobility transistors

Applied Physics Letters

Volumn 79, Issue 14, 2001, Pages 2196-2198

  Luo, B ^a   Johnson, J W ^a   Ren, F ^a   Allums, K K ^a   Abernathy, C R ^a   Pearton, S J ^a   Dwivedi, R ^b   Fogarty, T N ^b   Wilkins, R ^b   Dabiran, A M ^c   Wowchack, A M ^c   Polley, C J ^c   Chow, P P ^c   Baca, A G ^d  

^a University of Florida   (United States)

^b PRAIRIE VIEW A AND M UNIVERSITY   (United States)

^c SVT ASSOCIATES   (United States)

^d SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035474287     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1408606     Document Type: Article

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