Lattice location and annealing behavior of Mn implanted GaN

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 191, Issue 1-4, 2002, Pages 544-548

  Liu, C ^a,b   Alves, E ^a   Ramos, A R ^a   da Silva, M F ^a   Soares, J C ^a   Matsutani, T ^b   Kiuchi, M ^b  

^a UNIVERSITY OF LISBON   (Portugal)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

Gallium nitride (GaN); Implant's location; Ion implantation

Indexed keywords

ANNEALING; BACKSCATTERING; CRYSTAL LATTICES; HEAT TREATMENT; ION IMPLANTATION; IONS; LIGHT EMITTING DIODES; MAGNETIC SEMICONDUCTORS; X RAYS;

LATTICE LOCATION;

GALLIUM NITRIDE;

EID: 0036574503     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(02)00608-0     Document Type: Article

References (8)