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Volumn 5, Issue 7, 2002, Pages

Electrical characterization of GaN metal oxide semiconductor diode using Sc2O3 as the gate oxide

(10) Mehandru, R a Gila, B P a Kim, J a Johnson, J W a Lee, K P a Luo, B a Onstine, A H a Abernathy, C R a Pearton, S J a Rena, F a

a University of Florida (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE MEASUREMENT; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC INSULATORS; ELECTRON CYCLOTRON RESONANCE; ELECTRON MICROSCOPY; GALLIUM NITRIDE; INDUCTIVELY COUPLED PLASMA; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; MOSFET DEVICES; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SCANDIUM COMPOUNDS;

GATE INSULATOR; GATE OXIDE; INTERFACE STATE DENSITY; SCANDIUM OXIDE; TERMAN METHOD;

MOS DEVICES;

EID: 0036644184 PISSN: 10990062 EISSN: None Source Type: Journal
DOI: 10.1149/1.1479298 Document Type: Article

Times cited : (30)

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