Disordering and anomalous surface erosion of GaN during ion bombardment at elevated temperatures

Applied Physics Letters

Volumn 78, Issue 10, 2001, Pages 1373-1375

  Kucheyev, S O ^a   Williams, J S ^a   Zou, J ^b   Jagadish, C ^a   Li, G ^c  

^a AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

^b UNIVERSITY OF SYDNEY   (Australia)

^c Ledex Corporation   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035809543     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1347010     Document Type: Article

References (14)

1. See, for example, a recent review by S. J. Pearton, J. C. Zolper, R. J. Shul, and F. Ren. J. Appl. Phys. 86, 1 (1999), and references therein.
2. J. S. Williams, Rep. Prog. Phys. 49, 491 (1986); J. S. Williams, Mater. Sci. Eng., A 253, 8 (1998).
3. J. S. Williams, Rep. Prog. Phys. 49, 491 (1986); J. S. Williams, Mater. Sci. Eng., A 253, 8 (1998).
4. N. Parikh, A. Suvkhanov, M. Lioubtchenko, E. Carlson, M. Bremser, D. Bray, R. Davis, and J. Hunn, Nucl. Instrum. Methods Phys. Res. B 127/ 128, 463 (1997).
5. A. Suvkhanov, J. Hunn, W. Wu, D. Thomson, K. Price, N. Parikh, E. Irene, R. F. Davis, and L. Krasnobaev, Mater. Res. Soc. Symp. Proc. 512. 475 (1998).
6. A. Wenzel, C. Liu, and B. Rauschenbach, Mater. Sci. Eng.. B 59, 191 (1999).
7. S. O. Kucheyev, J. S. Williams, C. Jagadish, J. Zou, and G. Li, Phys. Rev. B 62, 7510 (2000); S. O. Kucheyev, J. S. Williams, J. Zou, C. Jagadish, and G. Li, Nucl. Instrum. Methods Phys. Res. B (in press).
8. S. O. Kucheyev, J. S. Williams, C. Jagadish, J. Zou, and G. Li, Phys. Rev. B 62, 7510 (2000); S. O. Kucheyev, J. S. Williams, J. Zou, C. Jagadish, and G. Li, Nucl. Instrum. Methods Phys. Res. B (in press).
9. S. O. Kucheyev, J. S. Williams, C. Jagadish, G. Li, and S. J. Pearton, Appl. Phys. Lett. 76, 3899 (2000).
10. W. Jiang, W. J. Weber, and S. Thevuthasan, J. Appl. Phys. 87, 7671 (2000).
11. See, for example, H. H. Andersen, in Ion Implantation and Beam Processing, edited by J. S. Williams and J. M. Poate (Academic, Sydney, Australia, 1984).
12. Even at elevated temperatures, implantation disorder effectively accumulates with increasing ion dose because dynamic annealing processes are never perfect.
13. Indeed, high-dose ion bombardment of GaN often results in pronounced loss of N in the near-surface layer, as has been discussed in Refs. 6 and 7.
14. S. O. Kucheyev, J. S. Williams, C. Jagadish, J. Zou, and G. Li, J. Appl. Phys. 88, 5493 (2000).