High performance microwave power GaN/AlGaN MODFETs grown by RF-assisted MBE

Electronics Letters

Volumn 36, Issue 5, 2000, Pages 468-469

  Nguyen, N X ^a   Micovic, M ^a   Wong, W S ^a   Hashimoto, P ^a   McCray, L M ^a   Janke, P ^a   Nguyen, C ^a  

^a HLR Laboratories   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

MICROWAVES; MOLECULAR BEAM EPITAXY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SILICON CARBIDE; SUBSTRATES;

ALUMINUM GALLIUM NITRIDE; GALLIUM NITRIDE; MODULATION DOPED FIELD EFFECT TRANSISTORS (MODFET);

FIELD EFFECT TRANSISTORS;

EID: 0033907629     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20000352     Document Type: Article

References (13)

1. FAN, Z., LU, C., BOTCHKAREV, A.E., TANG, H., SALVADOR, A., AKTAS, O., and MORKOC, H.: 'AlGaN/GaN double heterostructure channel modulation doped field effect transistors (MODFETs)', Electron. Lett., 1997, 33, pp. 814-815
2. WU, Y.-F., KELLER, B.P., KELLER, S., NGUYEN, N.X., LE, M., NGUYEN, C., JENKINS, T.J., KEHIAS, L.T., DENBAARS, S.P., and MISHRA, U.K.: 'High speed and high power AlGaN/GaN MODFETs'. 55th Annual Device Research Conf., Ft. Collins, CO, 1997,
3. 0.5N/GaN MODFETs with power density > 3W/mm at 18GHz', Electron. Lett., 1997, 33, pp. 1742-1743
4. GASKA, R., CHEN, Q., YANG, J., KHAN, A.M., SHUR, M.S., PING, A., and ADESIDA, I.: 'AlGaN-GaN heterostructure FETs with offset gate design', Electron. Lett., 1997, 33, pp. 1255-1257
5. SHEPPARD, S.T., DOVERSPIKE, K., LEONARD, M., PRIBBLE, W.L., ALLEN, S.T., and PALMOUR, J.W.: 'Improved operation of GaN/ AlGaN HEMTs on silicon carbide'. Int. Conf. Silicon Carbide and Related Materials, Research Triangle Park, NC, 1999
6. SHEPPARD, S.T., DOVERSPIKE, K., PRIBBLE, W.L., ALLEN, S.T., PALMOUR, J.W., KEHIAS, L.T., and JENKINS, T.J.: 'High-power microwave GaN/AlGaN HEMT's on semi-insulating silicon carbide substrates', Electron Device Lett., 1999, 20, pp. 161-163
7. KHAN, M.A., CHEN, Q., YANG, J.W., SUN, C.J., and SHUR, M.S.: 'Electronics devices based on GaN-AlGaN material system', Institute of Physics Conf. Series, 1996, Vol. 142, pp. 985-990
8. WU, Y.-F., THIBEAULT, B.J., KELLER, B.P., KELLER, S., DENBAARS, S.P., and MISHRA, U.K.: '3-Watt AlGaN/GaN HEMTs on sapphire substrates with thermal management by flip-chip bonding'. 56th Annual Device Research Conf., University of Virginia at Charlottesville, VA, 1998
9. AKTAS, O., FAN, Z.F., BOTCHKAREV, A., MOHAMMAD, S.N., ROTH, M., JENKINS, T., KEHIAS, L., and MORKOC, H.: 'Microwave performance of AlGaN/GaN inverted MODFET's', IEEE Electron Device Lett., 1997, 18, pp. 293-295
10. NGUYEN, N.X., NGUYEN, C., and GRIDER, D.E.: 'Device characteristics of scaled GaN/AlGaN MODFETs', Electron. Lett., 1998, 34, pp. 811-812
11. NGUYEN, C., NGUYEN, N.X., LE, M., and GRIDER, D.E.: 'High performance GaN/AlGaN MODFETs grown by RF-assisted MBE', Electron. Lett., 1998, 34, pp. 309-311
12. max and > 100V gate-drain breakdown voltage', Electron. Lett., 1997, 33, pp. 334-335
13. NGUYEN, C., NGUYEN, N.X., and GRIDER, D.E.: 'Drain current compression in GaN MODFETs under large-signal modulation at microwave frequencies', Electron. Lett., 1999, 35, pp. 1380-1381