Mechanics of Smart-Cut® technology

International Journal of Solids and Structures

Volumn 41, Issue 16-17, 2004, Pages 4299-4320

  Feng, Xi Qiao ^a   Huang, Y ^b  

^a TSINGHUA UNIVERSITY   (China)

^b University of Illinois at Urbana Champaign   (United States)

Author keywords

Analytic solution; Chemo mechanical process; Crack; Debonding; Fracture; Micro mechanics; Semiconductor material; Stress intensity factor

Indexed keywords

CRACK PROPAGATION; CRYSTAL STRUCTURE; DIFFUSION; ELASTICITY; FRACTURE MECHANICS; MATHEMATICAL MODELS; NUCLEATION;

BLISTERING; ELASTIC FRACTURE MECHANICS; FLAKING FAILURE;

CONTINUUM MECHANICS;

MANUFACTURING SYSTEM;

EID: 3042532471     PISSN: 00207683     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ijsolstr.2004.02.054     Document Type: Article

References (57)

1. Aspar B. Bruel M. Moriceau H., et-al. Basic mechanisms involved in the Smart-Cut® process Microelectron. Eng. 36 1-4 1997 233-240
2. Aspar B. Bruel M. Zussy M., et-al. Transfer of structured and patterned thin silicon films using the Smart-Cut® process Electron. Lett. 32 21 1996 1985-1986
3. Aspar B. Jalaguier E. Mas A., et-al. Smart-Cut® process using metallic bonding: application to transfer of Si, GaAs, InP thin films Electron. Lett. 35 12 1999 1024-1025
4. Aspar B. Moriceau H. Jalaguier E., et-al. The generic nature of the Smart-Cut® process for thin film transfer J. Electron. Mater. 30 7 2001 834-840
5. (R): the basic fabrication Unibond® SOI wafers IEICE T Electron. E 80 3 1997 358-363
6. Bedell S.W. Lanford W.A. Investigation of surface blistering of hydrogen implanted crystals J. Appl. Phys. 90 3 2001 1138-1146
7. Bruel M. Silicon-on-insulator material technology Electron. Lett. 31 14 1995 1201-1202
8. Bruel M. Application of hydrogen ion beams to silicon on insulator material technology Nucl. Instrum. Methods B 108 3 1996 313-319
9. Bruel M. Separation of silicon wafers by the Smart-Cut method Mater. Res. Innov. 3 1 1999 9-13
10. Bruel M. Aspar B. Auberton-Herve A.J. Smart-Cut: a new silicon on insulator material technology based on hydrogen implantation and wafer bonding Jpn. J. Appl. Phys. 36 3B 1997 1636-1641
11. Colinge J.P. Silicon-on-Insulator Technology: Materials to VLSI 1991 Kluwer Academic Boston
12. Cracknell A.P. Crystals and Their Structures 1969 Pergamon Oxford
13. Di Cioccio L. Letertre F., et-al. Silicon carbide on insulator formation using the Smart-Cut process Electron. Lett. 32 12 1996 1144-1145
14. Di Cioccio L. Letertre F., et-al. Silicon carbide on insulator formation by the Smart-Cut® process Mater. Sci. Eng. B 46 1997 349-356
15. Di Cioccio L. Le Tiec Y., et-al. Silicon carbide on insulator formation by the Smart-Cut® process Mater. Sci. Forum 264 1998 765-770
16. Ericson F. Johansson S. Schweitz J.-A. Hardness and fracture toughness of semiconducting materials studied by indentation and erosion techniques Mater. Sci. Eng. A 105/106 1988 131-141
17. Feng X.Q. Yu S.W. Damage Micromechanics of Quasi-Brittle Solids 2002 Higher Education Press Beijing
18. Freund L.B. A lower bound on implant density to induce wafer splitting in forming compliant substrate structures Appl. Phys. Lett. 70 26 1997 3519-3521
19. Gad M.A. Evans-Freeman J.H. Cinosi N., et-al. Loss measurements of Er-doped silicon-on-insulator waveguides Mater. Sci. Eng. B 105 2003 79-82
20. Gösele U. Tong Q.Y. Semiconductor wafer bonding Annu. Rev. Mater. Sci. 28 2000 215-241
21. Grisolia J. Ben Assayag G. Claverie A., et-al. A transmission electron microscopy quantitative study of the growth kinetics of H platelets in Si Appl. Phys. Lett. 76 7 2000 852-854
22. Grisolia J. Cristiano F. Ben Assayag G., et-al. Kinetic aspects of the growth of platelets and voids in H implanted Si Nucl. Instrum. Meth. B 178 2001 160-164
23. Haigh J.D. Probability Models 2002 Springer London
24. Haisma J. Spierings G.A.C.M. Contact bonding, including direct-bonding in a historical and recent context of materials science and technology, physics and chemistry--historical review in a broader scope and comparative outlook Mater. Sci. Eng. R 37 1-2 2002 1-60
25. Han W.H. Yu J.Z. Thermodynamic model of hydrogen-induced silicon surface layer cleavage J. Appl. Phys. 89 11 2001 6551-6553
26. Henttinen K. Suni T. Nurmela A., et-al. Cold ion-cutting of hydrogen implanted Si Nucl. Instrum. Meth. B 190 1-4 2002 761-766
27. Höchbauer T. Misra A. Verda R., et-al. Hydrogen-implantation induced silicon surface layer exfoliation Philos. Mag. B 80 11 2000 1921-1931
28. Höchbauer T. Misra A. Nastasi M., et-al. Investigation of the cut location in hydrogen implantation induced silicon surface layer exfoliation J. Appl. Phys. 89 11 2001 5980-5990
29. Höchbauer T. Misra A. Verda R., et-al. The influence of ion-implantation damage on hydrogen-induced ion-cut Nucl. Instrum. Meth. B 175 2001 169-175
30. Höchbauer T. Misra A. Nastasi M., et-al. Physical mechanisms behind the ion-cut in hydrogen implanted silicon J. Appl. Phys. 92 5 2002 2335-2342
31. Höchbauer T. Nastasi M. Verda R.D., et-al. The use of ion channeling and elastic recoil detection in determining the mechanism of cleavage in the ion-cut process Nucl. Instrum. Meth. B 190 1-4 2002 592-597
32. Hutchinson J.W. Suo Z. Mixed-mode cracking in layered materials Adv. Appl. Mech. 29 1992 63-191
33. Jalaguier E. Aspar B. Pocas S., et-al. Transfer of 3 in GaAs film on silicon substrate by proton implantation process Electron. Lett. 34 4 1998 408-409
34. Jensen H.M. The blister test for interface toughness measurement Eng. Fract. Mech. 40 3 1991 475-486
35. Jiang, H., Feng, X.Q., Huang, Y., et al., in press. Defect nucleation in carbon nanotubes under tension and torsion: Stone-Wales transformation. Comput. Meth. Appl. Mech. Eng. 193, in press
36. Kozlovskii V.V. Kozlov V.A. Lomasov V.N. Modification of semiconductors with proton beams Semiconductors 34 2 2000 129-147
37. Lanzavecchia S. Colombo L. Hydrogen bonding and migration in amorphous silicon Europhys. Lett. 36 4 1996 295-300
38. Lu X. Cheung N.W. Strathman M.D., et-al. Hydrogen induced silicon surface layer cleavage Appl. Phys. Lett. 71 13 1997 1804-1806
39. Lusson L. Elkaim P. Correia A. Ballutaud D. Hydrogen diffusion and trapping in micro-nanocrystalline silicon J. Phys. III France 5 1995 1173-1184
40. (R) technology Mater. Sci. Eng. B-Solid 46 1997 14-19
41. Petersen K.E. Silicon as a mechanical material Proc. IEEE 70 5 1982 420-457
42. Radu I. Szafraniak I. Scholz R., et-al. GaAs on Si heterostructures obtained by He and/or H implantation and direct wafer bonding J. Appl. Phys. 94 12 2003 7820-7825
43. Raineri V. Saggio M. Rimini E. Voids in silicon by He implantation: from basic to applications J. Mater. Res. 15 7 2000 1449-1477
44. Tada H. Paris P.C. Irwin G.C. The Stress Analysis of Cracks Handbook third ed. 2000 ASME Press New York
45. Timoshenko S.P. Gere J.M. Theory of Elastic Stability 1961 McGraw-Hill New York
46. Timoshenko S.P. Woinowsky-Kreiger S. Theory of Plates and Shells second ed. 1987 McGraw-Hill New York
47. Tong Q.Y. Bower R.W Beyond Smart-Cut®: recent advances in layer transfer for material integration MRS Bull. 23 12 1998 40-44
48. Tong Q.Y. Huang L.J. Gösele U. Transfer of semiconductor and oxide films by wafer bonding and layer cutting J. Electron. Mater. 29 7 2000 928-932
49. Tong Q.Y. Scholz R. Gösele U., et-al. A smarter-cut approach to low temperature silicon layer transfer Appl. Phys. Lett. 72 1 1998 49-51
50. Varma C.M. Hydrogen-implant induced exfoliation of silicon and other crystals Appl. Phys. Lett. 71 24 1997 3519-3521
51. Wang J. Xiao Q.H. Tu H.L., et-al. Microstructure evolution of hydrogen-implanted silicon during the annealing process Microelectron. Eng. 66 1-4 2003 314-319
52. Weldon M.K. Collot M. Chabal Y.J., et-al. Mechanism of silicon exfoliation induced by hydrogen/helium co-implantation Appl. Phys. Lett. 73 25 1998 3721-3723
53. Weldon M.K. Marsico V.E. Chabal Y.J., et-al. On the mechanism of the hydrogen-induced exfoliation of silicon J. Vac. Sci. Technol. B 15 4 1997 1065-1073
54. Yang F.Q. Hydrogen-induced silicon wafer splitting J. Appl. Phys. 94 3 2003 1454-1457
55. Yankov R.A. Mändl S. Plasma immersion ion implantation for silicon processing Ann. Phys. Berlin 10 4 2001 279-298
56. Yun C.H. Wengrow A.B. Cheung N.W. Ion-cut silicon layer transfer with patterned implantation of hydrogen Electrochem. Soc. Proc. 3 1999 125-130
57. Zheng Y. Lau S.S. Höchbauer T., et-al. Orientation dependence of blistering in H-implanted Si J. Appl. Phys. 89 5 2001 2972-2978