Investigation of the cut location in hydrogen implantation induced silicon surface layer exfoliation

Journal of Applied Physics

Volumn 89, Issue 11 I, 2001, Pages 5980-5990

  Hochbauer T ^a   Misra, A ^a   Nastasi, M ^a   Mayer, J W ^b  

^a LOS ALAMOS NATIONAL LABORATORY   (United States)

^b ARIZONA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035356819     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1353561     Document Type: Article

References (43)

1. Q. Y. Tong, K. Gutjahr, S. Hopfe, U. Gosele, and T. H. Lee, Appl. Phys. Lett. 70, 1390 (1997).
2. Q. Y. Tong, T. H. Lee, W. J. Kim, T. Y. Tan, U. Gösele, H. M. You, W. Yun, and J. K. O. Sin, IEEE International SOI Conference (Piscataway, NJ, 1996), p. 36.
3. M. Bruel, B. Aspar, B. Charlet, C. Maleville, T. Poumeyrol, A. Soubie, A. J. Auberton-Herve, J. M. Lamure, T. Barge, F. Metral, and S. Trucchi, 1995, Proceedings IEEE Tucson (Piscataway, NJ, 1995), p. 178.
4. M. Bruel, Nucl. Instrum. Methods Phys. Res. B 108, 313 (1996).
5. M. Bruel, MRS Bull. 12, 35 (1998).
6. M. J. Lobolda and G. A. Toskey, Solid State Technol. 41, 99 (1998).
7. L. B. Freund, Appl. Phys. Lett. 70, 3519 (1997).
8. C. M. Varma, Appl. Phys. Lett. 71, 3519 (1997).
9. G. F. Cerofolini, L. Meda, R. Balboni, F. Corni, S. Frabboni, G. Ottaviani, R. Tonini, M. Anderle, and R. Canteri, Phys. Rev. B 46, 2061 (1992).
10. M. K. Weldon, V. E. Marsico, Y. J. Chabal, A. Agarwal, D. J. Eaglesham, J. Sapjeta, W. L. Brown, D. C. Jacobson, Y. Caudano, and S. B. Christman, J. Vac. Sci. Technol. B 15, 1065 (1997).
11. M. K. Weldon, Y. J. Chabal, in The Properties of Crystalline Silicon, edited by R. Hull (1999), Vol. 20, p. 942.
12. A. Antilla, J. Hirvonen, and M. Hautala, Radiat. Eff. Lett. Sect. 57, 41 (1980).
13. M. Bister, J. Hirvonen, J. Räisänen, and A. Antilla, Radiat. Eff. 59, 199 (1981).
14. T. Höchbauer, M. Nastasi, and J. W. Mayer, Appl. Phys. Lett. 75, 3938 (1999).
15. T. Höchbauer, A. Misra, R. D. Verda, M. Nastasi, J. W. Mayer, Y. Zheng, and S. S. Lau, Philos. Mag. B (to be published).
16. J. Fu, T. V. Vorburger, and D. Ballard, Proc. SPIE 2725, 608 (1996).
17. G. F. Cerofolini, F. Corni, G. Ottaviani, and R. Tonini, Nucl. Instrum. Methods Phys. Res. B 71, 441 (1992).
18. G. Konac, S. Kalbitzer, Ch. Klatt, D. Niemann, and R. Stoll, Nucl. Instrum. Methods Phys. Res. B 136, 159 (1998).
19. H. S. Jin and W. M. Gibson, Nucl. Instrum. Methods Phys. Res. B 13, 76 (1986).
20. S. Roorda, J. M. Poate, D. C. Jacobson, D. J. Eaglesham, B. S. Dennis, S. Dierker, W. C. Sinke, and F. Saepen, Solid State Commun. 75, 197 (1990).
21. M. F. Ashby and L. M. Brown, Philos. Mag. 8, 1083 (1963).
22. M. Nastasi, P. Kodali, K. C. Walter, J. D. Embury, R. Ray, and Y. Nakamura, J. Mater. Res. 14, 2173 (1999).
23. C. S. Nichols, D. R. Clarke, and C. G. Van de Walle, Phys. Rev. Lett. 63, 1090 (1989).
24. C. G. Van de Walle, in Hydrogen in Semiconductors, edited by J. I. Pankove and N. M. Johnson (Academic, Boston, 1991), Chap. 16, pp. 585-622.
25. J. Grisola, G. Ben Assayag, A. Claverie, B. Aspar, C. Lagahe, and L. Laanab, Appl. Phys. Lett. 76, 852 (2000).
26. J. W. Mayer, L. Eriksson, and J. A. Davis, Ion Implantation in Semiconductors (Academic, New York, 1970).
27. K. B. Winterbon, P. Sigmund, and J. B. Sanders, Mat. Fys. Medd. Dan. Vid. Selsk. 37 (1970).
28. Q. Y. Tong, T. H. Lee, L. J. Juang, Y. L. Chao, and U. Gösele, Electron. Lett. 34, 407 (1998).
29. L. R. Doolittle, Nucl. Instrum. Methods Phys. Res. B 9, 344 (1985).
30. J. Tirira, Y. Serruys, and P. Trocellier, Forward Recoil Spectrometry, Application to Hydrogen Determination in Solids (Plenum, New York, 1996), p. 57.
31. J. F. Ziegler, J. B. Biersack, and U. Littmark, The Stopping and Range of Ions in Solids (Pergamon, New York, 1985).
32. A. D. Marwick, in Hydrogen in Semiconductors, edited by J. I. Pankove and N. M. Johnson (Academic, Boston, 1991), Chap. 9, pp. 200-225.
33. D. Fink, J. Krauser, D. Nagengast, T. Almeida Murphy, J. Erxmeier, L. Palmetshofer, D. Bräunig, and A. Weidinger, Appl. Phys. A: Mater. Sci. Process. 61, 381 (1995).
34. P. Deak, L. C. Snyder, and J. W. Corbett, Phys. Rev. B 37, 6887 (1988).
35. K. J. Chang and D. J. Chadi, Phys. Rev. Lett. 60, 1422 (1988).
36. Defects in Semiconductors 17, edited by H. Heinrich and W. Jantsch, Materials Science Forum (Trans. Tech. Switzerland, 1993), p. 143.
37. C. A. Volkert, J. Appl. Phys. 70, 3521 (1991).
38. A. Misra, S. Fayeulle, H. Kung, T. E. Mitchell, and M. Nastasi, Nucl. Instrum. Methods Phys. Res. B 148, 211 (1999).
39. H. Zillgen and P. Ehrhard, Nucl. Instrum. Methods Phys. Res. B 127, 27 (1997).
40. R. S. Averback and M. Ghaly, Nucl. Instrum. Methods Phys. Res. B 127, 1 (1997).
41. K.-N. Tu, J. W. Mayer, and L. C. Feldman, Electronic Thin Film Science (MacMillan, London, 1992), Chap. 4.
42. C. G. Van de Walle, P. J. H. Denteneer, Y. Bar-Yam, and S. T. Pantelides, Phys. Rev. B 39, 10791 (1989).
43. C. G. Van de Walle and N. H. Nickel, Phys. Rev. B 51, 2636 (1995).