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Volumn 3, Issue 1, 1999, Pages 9-13

Separation of silicon wafers by the smart-cut method

Author keywords

Hydrogen implantation induced splitting; Monocrystalline layer; Silicon on insulator; Wafer bonding

Indexed keywords


EID: 0033148050     PISSN: 14328917     EISSN: None     Source Type: Journal    
DOI: 10.1007/s100190050119     Document Type: Article
Times cited : (52)

References (18)
  • 4
    • 0009218889 scopus 로고
    • Radiation damage of 50-250 keV hydrogen ions in silicon
    • Chernow F, Borders JA, Brice DK (eds) Plenum Press, New York
    • Chu WK, Kastl RH, Lever RF, Mader S, Masters BJ (1976) Radiation damage of 50-250 keV hydrogen ions in silicon. In: Chernow F, Borders JA, Brice DK (eds) Ion implantation in semiconductors. Plenum Press, New York
    • (1976) Ion Implantation in Semiconductors
    • Chu, W.K.1    Kastl, R.H.2    Lever, R.F.3    Mader, S.4    Masters, B.J.5
  • 10
    • 0009219681 scopus 로고
    • Patent FR 2,681,472, (1994) US 5,374,564
    • Bruel M (1993) Patent FR 2,681,472, (1994) US 5,374,564
    • (1993)
    • Bruel, M.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.