Wafer bonding and H-implantation mechanisms involved in the Smart-cut® technology

Materials Science and Engineering B

Volumn 46, Issue 1-3, 1997, Pages 14-19

  Maleville, Christophe ^a   Aspar, B ^a   Poumeyrol, T ^a   Moriceau, H ^a   Bruel, M ^a   Auberton Herve A J ^b   Barge, T ^b  

^a CEA GRENOBLE   (France)

^b PARC TECHNOLOGIQUE DES FONTAINES   (France)

Author keywords

Hydrogen implantation; Smart Cut technology; Wafer bonding

Indexed keywords

BONDING; CRYSTAL DEFECTS; ETCHING; HYDROGEN; INTERFACES (MATERIALS); ION IMPLANTATION; SEMICONDUCTOR DEVICE STRUCTURES; SILICON WAFERS; SURFACE CLEANING; SURFACE ROUGHNESS; THERMAL EFFECTS;

SMART CUT TECHNOLOGY;

SILICON ON INSULATOR TECHNOLOGY;

EID: 0004704389     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(96)01923-X     Document Type: Article

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