The influence of ion-implantation damage on hydrogen-induced ion-cut

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 175-177, Issue , 2001, Pages 169-175

  Hochbauer T ^a   Misra, A ^a   Verda, R ^a   Zheng, Y ^b   Lau, S S ^b   Mayer, J W ^c   Nastasi, M ^a  

^a LOS ALAMOS NATIONAL LABORATORY   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

^c ARIZONA STATE UNIVERSITY   (United States)

Author keywords

Fracture mechanics; Implantation; Ion cut; Silicon on insulator (SOI)

Indexed keywords

BUBBLES (IN FLUIDS); CRYSTAL DEFECTS; CRYSTAL LATTICES; FRACTURE MECHANICS; HYDROGEN; ION IMPLANTATION; NUCLEATION; PROTONS; SILICON ON INSULATOR TECHNOLOGY; STRAIN; STRESS ANALYSIS;

PROTON IMPLANTATION INDUCED DAMAGE;

SILICON WAFERS;

EID: 0035302126     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(00)00540-1     Document Type: Conference Paper

References (24)