Cold ion-cutting of hydrogen implanted Si

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 190, Issue 1-4, 2002, Pages 761-766

  Henttinen, K ^a   Suni, T ^a   Nurmela, A ^a   Suni, I ^a   Lau, S S ^b   Hochbauer T ^c   Nastasi, M ^c   Airaksinen, V M ^d  

^a VTT TECHNICAL RESEARCH CENTRE OF FINLAND   (Finland)

^b UNIVERSITY OF CALIFORNIA   (United States)

^c LOS ALAMOS NATIONAL LABORATORY   (United States)

^d Okmetic Oyj   (Finland)

Author keywords

Hydrogen implantation; Ion channeling; Silicon on insulator; Wafer bonding

Indexed keywords

ANNEALING; CRACKS; CRYSTAL ORIENTATION; DOPING (ADDITIVES); HYDROGEN; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTING BORON; SILICON ON INSULATOR TECHNOLOGY; SILICON WAFERS; THERMAL EFFECTS;

NEUTRALIZATION;

ION IMPLANTATION;

EID: 0036569055     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(01)01209-5     Document Type: Conference Paper

References (12)