Smart-Cut process using metallic bonding: Application to transfer of Si, GaAs, InP thin films

Electronics Letters

Volumn 35, Issue 12, 1999, Pages 1024-1025

  Aspar, B ^a   Jalaguier, E ^a   Mas, A ^a   Locatelli, C ^a   Rayssac, O ^a   Moriceau, H ^a   Pocas, S ^a   Papon, A M ^a   Michaud, J F ^a   Bruel, M ^a  

^a CEA LETI   (France)

Author keywords

[No Author keywords available]

Indexed keywords

BONDING; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE STRUCTURES; SILICON WAFERS; SUBSTRATES;

METALLIC BONDING;

THIN FILMS;

EID: 13044254778     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19990663     Document Type: Article

References (7)

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3. JALAGUIER, E., DESSAUD, N., ASPAR, B., POCAS, S., PAPON, A.M., and BRUEL, M.: 'Transfert de films minces d'InP (3 pouces) sur substrat silicium'. JNMO'99 (7émes Journées Nationales de Microélectronique et Optoélectronique), Egat, France, 1999
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