Kinetic aspects of the growth of platelets and voids in H implanted Si

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 178, Issue 1-4, 2001, Pages 160-164

  Grisolia, J ^a   Cristiano, F ^a   Ben Assayag, G ^a   Claverie, A ^a  

^a CEMES CNRS   (France)

Author keywords

Electron microscopy; Hydrogen cavities; Hydrogen implantation; SIMS; Voids

Indexed keywords

ANNEALING; HYDROGEN; ION IMPLANTATION; KINETIC THEORY; PROTON IRRADIATION; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR GROWTH; TRANSMISSION ELECTRON MICROSCOPY;

OSTWALD RIPENING THEORY; PLATELETS;

SEMICONDUCTING SILICON;

EID: 0035333165     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(00)00503-6     Document Type: Conference Paper

References (10)