Beyond "Smart-Cut®": Recent advances in layer transfer for material integration

MRS Bulletin

Volumn 23, Issue 12, 1998, Pages 40-44

  Tong, Q Y ^a   Bower, R W ^a  

^a NONE

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EID: 0040287326     PISSN: 08837694     EISSN: None     Source Type: Journal    
DOI: 10.1557/S0883769400029821     Document Type: Article

References (30)

1. M. Bruel, Electron. Lett. 31 (1995) p. 1201.
2. L. Di Cioccio, Y. Le Tiec, F. Letertre, C. Jaussaud, and M. Bruel, ibid. 32 (12) (1996) p. 1144.
3. E. Jalaguier, B. Aspar, S. Pocas, J.F. Michaud, M. Zussy, A.M. Papon, and M. Bruel, ibid. 34 (4) (1998) p. 408.
4. Q-Y. Tong, K. GutJahr, S. Hopfe, U. Gösele, and T-H. Lee, Appl. Phys. Lett. 70 (1997) p. 1390.
5. M.K. Weldon, V.E. Marsico, Y.J. Chabal, A. Agarwal, D.J. Eaglesham, J. Sapjeta, W.L. Brown, D.C. Jacobson, Y. Caudano, S.B. Christman, and E.E. Chaban, in Proc. Fourth Int. Symp. on Semiconductor Wafer Bonding: Science. Technology and Applications, vol. 97-36 (Electrochemical Society, Pennington, NJ, 1998) p. 229.
6. Q-Y. Tong, T-H. Lee, L-J. Huang, Y-L. Chao, W.J. Kim, R. Scholz, T-Y. Tan, and U. Gösele, ibid., vol. 97-36, edited by S.H. Grösele, H. Baumgart, T. Abe, C. Hunt, and S. Iyer (Electrochemical Society, Pennington, NJ, 1998) p. 521.
7. M. Bruel, U.S. Patent No. 5,374,564 (December 20, 1994).
8. Q-Y. Tong, R. Scholtz, U. Gösele, T-H. Lee, L-J. Huang, Y-L. Chao, and T-Y. Tan, Appl. Phys. Lett. 72 (1) (1998) p. 49.
9. C.G. Van der Walle, Phys. Rev. B 49 (1994) p. 4579.
10. S.J. Pearton, J.W. Corbett, and T.S. Shi, Appl. Phys. A 43 (1987) p. 153.
11. G.F. Cerofolini, R. Balboni, D. Bisero, F. Corni, S. Frabboni, G. Ottaviani, R. Tonini, R.S. Brusa, A. Zecca, M. Ceschini, G. Giebel, and L. Pavesi, Phys. Status Solidi A 150 (1995) p. 539.
12. Q-Y. Tong, L-J. Huang, Y-L. Chao, A. Ploessl, and U. Gösele, in Proc. 1998 IEEE Int. SOI Conf. (October 1998) p. 143.
13. P.J.H. Denteneer, C.G. Van der Walle, and S.T. Pantelides, Phys. Rev. B 39 (1989) p. 10809.
14. J.T. Borenstein, J.W. Corbett, and S.J. Pearton, J. Appl. Phys. 73 (1993) p. 2751.
15. G. Hess, P. Parkinson, B. Gong, Z. Xu, D. Lim, M. Downer, S. John, S. Banerjee, and J.G. Ekerdt, Appl. Phys. Lett. 71 (1997) p. 2184.
16. R.W. Bower, L. LeBoeuf, and Y.A. Li, II Nuovo Cimento 19, D, N. 12 (1997) p. 1871.
17. A.D. Marwick, G.S. Oehrlein, and M. Wittmer, Appl. Phys. Lett. 59 (2) (1991) p. 198.
18. A. Agarwal, T.E. Haynes, V.C. Venezia, O.W. Holland, and D.J. Eaglesham, ibid. 72 (9) (1998) p. 1086.
19. Q-Y. Tong, T-H. Lee, L-J. Huang, Y-L. Chao, and U. Gösele, Electron. Lett. 34 (1998) p. 407.
20. L.B. Freund, Appl. Phys. Lett. 70 (1997) p. 3519.
21. L-J. Huang,Q-Y. Tong, T-H. Lee, Y-L. Chao, and U. Gösele, in Proc. 8th Int. Symp. Silicon Materials Science and Technology, vol. 98-1, edited by H.R. Huff, H. Tsuya, and U. Gösele (Electrochemical Society, Pennington, NJ, 1998) p. 1373.
22. R.W. Bower and Y.A. Li, to be published.
23. Q-Y. Tong, T-H. Lee, L-J. Huang, Y-L. Chao, and U. Gösele, to be published.
24. R.W. Bower, M.S. Ismail, and B.E. Roberds, Appl. Phys. Lett. 28 (1993) p. 2485.
25. R.W. Bower, M.S. Ismail, U.S. Patent No. 5,503,704 (1996).
26. Y.A. Li and R.W. Bower, Jpn. J. Appl. Phys. 37 (3) (1998) p. 737.
27. R.W. Bower and Y.A. Li, in Proc. SPIE, Vol. 3184 (1997) p. 2.
28. Y.A. Li and R.W. Bower, Jpn. J. Appl. Phys. In press.
29. A. J. Auberton-Hervé, M. Bruel, B. Aspar, C. Maleville, and H. Moriciau, Smart-Cut®: IEICE Trans. Electron., vol. E80-C.3, March 1997.
30. R.W. Bower, Patent Applied for 1997.