Noise in SiGe HBT RF technology: Physics, modeling, and circuit implications

Proceedings of the IEEE

Volumn 93, Issue 9, 2005, Pages 1583-1597

  Niu, Guofu ^a  

^a AUBURN UNIVERSITY   (United States)

Author keywords

1 f noise; Corner frequency; Cyclostationary noise; Noise figure; Noise parameters; Phase noise; SiGe heterojunction bipolar transistor (HBT); Upconversion

Indexed keywords

COMPUTER SIMULATION; ELECTRIC RESISTANCE; INTEGRATED CIRCUIT LAYOUT; MATHEMATICAL MODELS; NATURAL FREQUENCIES; POWER AMPLIFIERS; SEMICONDUCTING SILICON COMPOUNDS; SHOT NOISE; THERMAL NOISE;

1/F NOISE; CORNER FREQUENCY; CYCLOSTATIONARY NOISE; NOISE FIGURE; PHASE NOISE; SIGE HETEROJUNCTION BIPOLAR TRANSISTORS (HBT); UPCONVERSION;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 24944498406     PISSN: 00189219     EISSN: None     Source Type: Journal    
DOI: 10.1109/JPROC.2005.852226     Document Type: Conference Paper

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