Low-frequency noise properties of sige hbt's and application to ultra-low phase-noise oscillators

IEEE Transactions on Microwave Theory and Techniques

Volumn 46, Issue 5 PART 2, 1998, Pages 647-652

  Van Haaren, Bart ^a,b,c   Régis, Myrianne ^a,b,c   Llopis, Olivier ^a,b,c   Escotte, Laurent ^a,b,c   Grüble, Andreas ^a,b,c   Mähner, Claus ^a,b,c   Plana, Robert ^a,b,c   Graffeuil, Jacques ^a,b,c  

^a LAAS CNRS   (France)

^b UNIVERSITÉ DE TOULOUSE   (France)

^c DAIMLER AG   (Germany)

Author keywords

Dielectric resonator oscillators; Ge si alloys; Heterojunction bipolar transistors; Low frequency noise; Microwave oscillators; Noise, 1 f noise; Phase noise; Sige alloys; Silicon

Indexed keywords

MICROWAVE OSCILLATORS; MILLIMETER WAVE DEVICES; MOLECULAR BEAM EPITAXY; PASSIVATION; RESONATORS; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR GROWTH; SILICON ALLOYS; SPURIOUS SIGNAL NOISE;

DIELECTRIC RESONATOR OSCILLATORS (DRO); ULTRA LOW PHASE NOISE OSCILLATORS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0032075480     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/22.668677     Document Type: Article

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