Hierarchical 2-D DD and HD noise simulations of Si and SiGe devices - Part II: Results

IEEE Transactions on Electron Devices

Volumn 49, Issue 7, 2002, Pages 1258-1264

  Jungemann, Christoph ^a,b   Neinhüs, Burkhard ^b   Decker, S ^c   Meinerzhagen, Bernd ^a,b  

^a IEEE   (Germany)

^b UNIVERSITY OF BREMEN   (Germany)

^c INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

Device simulation; Heterojunction bipolar transistor (HBT); Monte Carlo; Noise; Silicon

Indexed keywords

CURRENT CORRELATION FUNCTIONS; DRIFT DIFFUSION NOISE MODELS; EINSTEIN RELATION; HYDRODYNAMIC NOISE MODEL; SILICON GERMANIUM;

COMPUTER SIMULATION; ELECTRON SCATTERING; HETEROJUNCTION BIPOLAR TRANSISTORS; IMPACT IONIZATION; MONTE CARLO METHODS; ONE DIMENSIONAL; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE STRUCTURES; SPURIOUS SIGNAL NOISE; THERMODYNAMICS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0036638898     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2002.1013284     Document Type: Article

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