Microwave noise sources in AlGaAs/GaAs HBTs

IEEE MTT-S International Microwave Symposium Digest

Volumn 3, Issue , 2002, Pages 2117-2120

  Sakalas, Paulius ^a,b   Schröter, Michael ^a   Zampardi, Pete ^c   Zirath, Herbert ^d   Welser, Roger ^e  

^a DRESDEN UNIVERSITY OF TECHNOLOGY   (Germany)

^b CENTER FOR PHYSICAL SCIENCES AND TECHNOLOGY   (Lithuania)

^c Conexant Systems Inc ^*  (United States)

^d CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

^e Koping Corporation   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; SCATTERING PARAMETERS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SPURIOUS SIGNAL NOISE;

MICROWAVE NOISE SOURCES; NOISE PARAMETERS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0036069629     PISSN: 0149645X     EISSN: None     Source Type: Journal    
DOI: 10.1109/MWSYM.2002.1012288     Document Type: Article

References (14)

1. Microwave noise performance of In/InGaAs HBTs
2. DC, RF and noise characteristics of carbon-doped base InP/InGaAs HBTs
3. High-frequency noise of bipolar devices in consideration of carrier heating and low temperature effects
4. Noise modeling of microwave HETs
5. High-speed, low-noise InGaP/GaAs HBTs
6. Junction temperature dependence of high-frequency noise in HBTs
7. Small-signal and noise model extraction technique for HBTs at microwave frequencies
8. Bias, frequency, and area dependencies of high frequency noise in AlGaAs/GaAs HBT’s
9. RF noise characterization of a high performance InP/InGaAs HBT
10. Noise modeling of InP-based base and collector self-aligned double heterojunction BTs
11. Microwave noise in InP/InGaAs and GaAs/AlGaAs HBTs
12. Direct extraction of the AlGaAs/GaAs HBT small-signal equivalent circuit
13. Microwave low-noise AlGaAs/InGaAs HBT’s with p+-regrown base contacts
14. A unified approach to RF and microwave noise parameter modeling in bipolar transistors