Investigation of compact models for RF noise in SiGe HBTs by hydrodynamic device simulation

IEEE Transactions on Electron Devices

Volumn 51, Issue 6, 2004, Pages 956-961

  Jungemann, Christoph ^a   Neinhüs, Burkhard ^a   Meinerzhagen, Bernd ^a   Dutton, Robert W ^b  

^a TECHNICAL UNIVERSITY OF BRAUNSCHWEIG   (Germany)

^b Stanford University   (United States)

Author keywords

Device simulation; Heterojunction bipolar transistor (HBT); Hydrodynamic; Noise; Silicon

Indexed keywords

COMPUTER SIMULATION; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MODELS; SPURIOUS SIGNAL NOISE;

HYDRODYNAMIC DEVICE SIMULATION; SOFTWARE PACKAGE SPICE;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 2942670458     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2004.828277     Document Type: Article

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