Noise-gain tradeoff in RF SiGe HBTs

Solid-State Electronics

Volumn 46, Issue 9, 2002, Pages 1445-1451

  Niu, Guofu ^a   Cressler, John D ^a   Zhang, Shiming ^a   Joseph, Alvin ^b   Harame, David ^b  

^a AUBURN UNIVERSITY   (United States)

^b IBM MICROELECTRONICS   (United States)

Author keywords

Associated gain; Bipolar technology; RF circuits; RF noise; SiGe HBT

Indexed keywords

FREQUENCIES; GAIN MEASUREMENT; NOISE ABATEMENT; OPTIMIZATION; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SPURIOUS SIGNAL NOISE;

RADIO FREQUENCY NOISE;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0036721653     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(02)00087-4     Document Type: Article

References (18)

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