Transistor design and application considerations for >200-GHz SiGe HBTs

IEEE Transactions on Electron Devices

Volumn 50, Issue 3, 2003, Pages 645-655

  Freeman, Greg ^a   Jagannathan, Basanth ^a   Jeng, Shwu Jen ^a   Rieh, Jae Sung ^a   Stricker, Andreas D ^a   Ahlgren, David C ^a   Subbanna, Seshadri ^a  

^a IBM   (United States)

Author keywords

BiCMOS integrated circuits; Bipolar transistors; Heterojunctions; Semiconductor devices

Indexed keywords

CAPACITANCE; CARRIER MOBILITY; CHEMICAL VAPOR DEPOSITION; CMOS INTEGRATED CIRCUITS; CURRENT DENSITY; DIFFUSION; ELECTRIC RESISTANCE; ELECTRIC SPACE CHARGE; HETEROJUNCTION BIPOLAR TRANSISTORS; SEMICONDUCTING SILICON COMPOUNDS;

AVALANCHE CURRENT; RING OSCILLATOR DELAY; SILICON GERMANIUM HETEROJUNCTION BIPOLAR TRANSISTOR;

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 0037560921     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2003.810467     Document Type: Article

References (36)

1. T in a manufacturable technology," IEEE Electron Device Lett., vol. 23, pp. 258-260, May 2002.
2. W. E. Stanchina, M. Sokolich, and K. R. Elliott, "Process and integration technologies for InP ICs," in Int. Conf. on Indium Phosphide and Related Materials, 2001, pp. 489-492.
3. D. Sawdai, E. Kaneshiro, A. Gutierrez-Aitken, P. C. Grossman, K. Sato, W. Kim, G. Leslie, J. Eldredge, T. Block, P. Chin, L. Tran, A. K. Oki, and D. C. Streit, "High performance, high yield InP DHBT production process for 40 Gb/s applications," in Proc. Int. Conf. Indium Phosphide and Related Materials, 2001, pp. 493-496.
4. E. O. Johnson, "Physical limitations on frequency and power parameters of transistors," RCA Rev., vol. 26, pp. 163-177, June 1965.
5. M. Racanelli, K. Schuegraf, A. Kalburge, A. Kar-Roy, B. Shen, C. Hu, D. Chapek, D. Howard, D. Quon, F. Wang, G. U'ren, L. Lao, H. Tu, J. Zheng, J. Zhang, K. Bel, K. Yin, P. Joshi, S. Akhtar, S. Vo, T. Lee, W. Shi, and P. Kempf, "Ultra high speed SiGe NPN for advanced BiCMOS technology," in IEDM Tech. Dig., 2001, pp. 336-338.
6. max," in IEDM Tech. Dig., pp. 332-335.
7. T SiGe heterojunction bipolar transistor with a nonself-aligned (NSA) structure," IEEE Electron Device Lett., vol. 22, pp. 542-544, 2001.
8. L. D. Lanzerotti, J. Sturm, E. Stach, R. Hull, T. Buyuklimanli, and C. Magee, "Suppression of boron outdiffusion in SiGe HBT's by carbon incorporation," in IEDM Tech. Dig, 1996, pp. 249-252.
9. H. Rucker, B. Heinemann, D. Bolze, D. Knoll, D. Kruger, R. Kurps, H. J. Osten, P. Schley, B. Tillack, and P. Zaumseil, "Dopant diffusion in C-doped Si and SiGe: Physical model and experimental verification," in IEDM Tech. Dig., 1999, pp. 345-348.
10. W. Fang, "Accurate analytical delay expressions for ECL and CML circuits and their applications to optimizing high-speed bipolar circuits," IEEE J. Solid-State Circuits, vol. 25, pp. 572-583, 1990.
11. M. Rodwell, M. Urteaga, Y. Bester, T. Mathew, P. Krishnan, D. Scott, S. Jagannathan, D. Mensa, J. Guthrie, R. Pullela, Q. Lee, B. Agarwal, U. Bhattacharya, and S. Long, "Scaling to InGaAs/InAlAs HBT's for high speed mixed signal and mm-wave ICs," Int. J. High Speed Electron. Syst., vol. 11, no. 1, pp. 159-215, 2001.
12. J. Bock, H. Schafer, H. Knapp, D. Zoschg, K. Aufinger, M. Wurzer, S. Boguth, R. Stengl, R. Schreiter, and T. F. Meister, "High-speed SiGe: C bipolar technology," in IEDM Tech. Dig., 2001, pp. 344-347.
13. M. Sokolich, C. H. Fields, S. Thomas, III, B. Shi, Y.-K. Boegeman, M. Montes, R. Martinez, A. R. Kramer, and M. Madhav, "A low power 72.8-GHz static frequency divider in AlInAs/InGaAs HBT technology," IEEE J. Solid State Circuits, vol. 36, pp. 1328-1334, Sept. 2001.
14. MAX and 6.7-ps ECL," in IEDM Tech. Dig., 1999, pp. 557-560.
15. MAX over 250 GHz," in IEDM Tech. Dig., 1998, pp. 653-656.
16. D. Gloria, S. Gellida, and G. Morin, "A new extraction method of high frequency noise parameters in the temperature range - 55/150deg. for SiGe HBT in BiCMOS process," in Proc. ICMTS, 2000, pp. 229-234.
17. G. Freeman, D. Greenberg, K. Walter, and S. Subbanna, "SiGe HBT performance improvements from lateral scaling," in Proc. Eur. Solid-State Device Research Conf., 1999.
18. D. Terpstra and W. B. de Boer, "Anomalous collector base leakage in selectively grown SiGe base heterojunction bipolar transistors," in Proc. 29th Eur. Solid State Device Research Conf., 1999, pp. 720-723.
19. K. Oda, E. Ohue, T. Onai, and K. Washio, "Heterojunction bipolar transistor," U.S. Patent 5 962 880, Oct. 5, 1999.
20. J.-S. Rieh, D. Greenberg, B. Jagannathan, G. Freeman, and S. Subbanna, "Measurement and modeling of thermal resistance of high speed SiGe heterojunction bipolar transistors," in Silicon Monolithic Integrated Circuits in RF Systems Dig., 2001, pp. 110-113.
21. J. Johnson, A. Stricker, A. Joseph, and J. Slinkman, "A technology simulation methodology for AC-performance optimization if SiGe HBTs," in IEDM Tech. Dig., 2001, pp. 489-492.
22. M. Hafizi and M. J. Delaney, "Reliability of InP-based HBT's and HEMT's: Experiments, failure mechanisms, and statistics," in Proc. Int. Conf. InP and Related Materials, 1994, pp. 299-302.
23. M. S. Carroll, A. Neugroschel, and C.-T. Sah, "Degradation of silicon bipolar junction transistors at high forward current densities," IEEE Trans. Electron Devices, vol. 44, pp. 110-117, Jan.
24. J.-S. Rieh, K. Watson, F. Guarin, Z. Yang P.-C. Wang, A. Joseph, G. Freeman, and S. Subbanna, "Wafer level forward current reliability analysis of 120GHz production SiGe HBT's under accelerated current stress," in Proc. IEEE Int. Reliability Physics Symp., Apr. 2002, pp. 184-188.
25. S. Thomas, III, J. A. Foschaar, C. H. Fields, M. M. Madhav, M. Sokolich, R. D. Rajavel, and B. Shi, "Effects of device design on InP-based HBT thermal resistance," IEEE Trans. Device Mater. Reliab., vol. 1, pp. 185-189, 2001.
26. W. Liu, H. F. Chau, and E. Beam, III, "Thermal properties and thermal instabilities of InP-Based heterojunction bipolar transistors," IEEE Trans. Electron Devices, vol. 43, pp. 388-395, Mar. 1996.
27. S. R. Bahl, N. Moll, V. M. Robbins, H. C. Kuo, B. G. Moser, and G. E. Stillman, "Be diffusion in InGaAs/InP heterojunction bipolar transistors," IEEE Electron Device Lett., vol. 21, pp. 332-334, July 2000.
28. M. Ray, D. Hill, O. Hartin, K. Johnson, and P. Li, "Thermal impact of InGaAs on InP based HBTs," in Proc. GaAs IC Conf., 2001, pp. 261-264.
29. M. Rickelt, H. M. Rein, and E. Rose, "Influence of impact-ionization-induced instabilities on the maximum usable output voltage of Si-Bipolar transistors," IEEE Trans. Electron Devices, vol. 48, pp. 774-783, Apr. 2001.
30. D. R. Greenberg, M. Rivier, P. Girard, E. Bergeault, J. Moniz. D. Ahlgren, G. Freeman, S. Subbanna, S. J. Jeng, K. Stein, D. Nguyen-Ngoc, K. Schonenberg, J. Malinowski, D. Colavito, D. L. Harame, and B. Meyerson, "Large-signal performance of high-BV/sub CEO/ graded epi-base SiGe HBT's at wireless frequencies," in IEDM Tech. Dig, 1997, pp. 709-802.
31. R. Schmid, T. F. Meister, M. Rest, and H.-M. Rein, "40 Gbit/s EAM driver IC in SiGe bipolar technology," Electron. Lett., vol. 34, no. 11, pp. 1095-1097, May 1998.
32. T SiGe technology," IEEE J. Solid State Circuits, vol. 37, pp. 1106-1114, Sept., 2002.
33. T SiGe HBT BiCMOS, ASIC-compatible, copper interconnect technology for RF and microwave applications," in IEDM Tech. Dig., 1999, pp. 569-572.
34. J. Bock, H. Schafer, H. Knapp, D. Zoschg, K. Aufinger, M. Wurzer, S. Boguth, R. Stengl, R. Schreiter, and T. F. Meister "High-speed SiGe: C bipolar technology," in IEDM Tech. Dig., 2001, pp. 344-347.
35. E. Ohue, R. Hayarni, K. Oda, H. Shimarnoto, and K. Washio, "5.3-ps ECL and 71-GHz static frequency divider in self-aligned SEG SiGe HBT," in Proc. BCTM, 2001, pp. 26-29.
36. M. Sokolich, A. R. Kramer, Y. K. Boegeman, and R. R. Martinez, "Demonstration of sub-5 ps CML ring oscillator gate delay with reduced parasitic AlInAs/InGaAs HBT," IEEE Electron Device Lett., vol. 22, pp. 309-311, 2001.