Base-profile optimization for minimum noise figure in advanced uhv/cvd sige hbt's

IEEE Transactions on Microwave Theory and Techniques

Volumn 46, Issue 5 PART 2, 1998, Pages 653-660

  Ansley, William E ^a,b   Cressler, John D ^a,b   Richey, David M ^a,b  

^a AUBURN UNIVERSITY   (United States)

^b NOKIA RESEARCH CENTER   (United States)

Author keywords

Germanium; Heterojunction bipolar transistors; Semiconductor device modeling; Semiconductor device noise; Silicon

Indexed keywords

CHEMICAL VAPOR DEPOSITION; COMPUTER SIMULATION; ELECTRIC CURRENT CONTROL; GAIN CONTROL; OPTIMIZATION; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING; SPURIOUS SIGNAL NOISE; THERMODYNAMIC STABILITY; VACUUM;

BASE PROFILE OPTIMIZATION; SEMICONDUCTOR DEVICE NOISE;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0032073891     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/22.668678     Document Type: Article

References (15)

1. H. Schumacher, U. Erben, and A. Gruhle, "Low-noise performance of SiGe heterojunction bipolar transistors," in IEEE Microwave MillimeterWave Circuit Symp. Dig., San Diego, CA, May 1994, pp. 213-216.
2. D. L. Harame, L. Larson, M. Case, S. Kovacic, S. Voinigescu, T. Tewksbury, D. Nguyen-Ngoc, K. Stein, J. Cressler, S.-J. Jeng, J. Malinowski, R. Groves, E. Eld, D. Sunderland, D. Rensch, M. Gilbert, K. Schonenberg, D. Ahlgren, S. Rosenbaum, J. Glenn, and B. Meyerson, "SiGe HBT technology: Device and application issues," in 1EDM Tech. Dig., Washington, DC, Dec. 1995, pp. 731-734.
3. R. J. Hawkins, "Limitations of Nielsen's and related noise equations applied to microwave bipolar transistors, and a new expression for the frequency and current dependent noise figure," Solid State Electron., vol. 20, pp. 191-196, July 1977.
4. D. M. Richey, J. D. Cressler, and R. C. Jaeger, "Numerical simulation of SiGe HBT's at cryogenic temperatures," J. Phys. IV, Coll. C6 Suppl. in J. Phys. Ill, vol. 4, pp. C6:127-C6:132, 1994.
5. _, "Low-temperature modeling of SiGe HBT's using SCORPIO," in Proc. Electrochemical Soc. Symp. Low-Temperature Electron. High-Temperature Superconductivity, Pennington, NJ, May 1995, pp. 178-188.
6. D. M. Richey, J. D. Cressler, and A. J. Joseph, "Scaling issues and Ge profile optimization in advanced UHV/CVD SiGe HBT's," IEEE Trans. Electron Devices, vol. 44, pp. 431-440, Mar. 1997.
7. A. J. Joseph, J. D. Cressler, D. M. Richey, and D. L. Harame, "Impact of profile scaling on high-injection barrier effect in advanced UHV/CVD SiGe HBT's," in IEDM Tech. Dig., San Francisco, CA, Dec. 1996, pp. 253-256.
8. A. J. Joseph, J. D. Cressler, D. M. Richey, R. C. Jaeger, and D. L. Harame, "Neutral base recombination and its influence on the temperature dependence of Early voltage and current gain-Early voltage product in UHV/CVD SiGe heterojunction bipolar transistors," IEEE Trans Electron Devices, vol. 44, pp. 404-413, Mar. 1997.
9. D. L. Harame, J. M. C. Stork, B. S. Meyerson, K. Y.-J. Hsu, J. Cotte, K. A. Jenkins, J. D. Cressler, P. Restle, E. F. Crabb, S. Sabanna, T. E. Tice, B. W. Scharf, and J. A. Yasaitis, "Optimization of SiGe HBT technology for high-speed analog and mixed-signal applications," in IEDM Tech. Dig., Washington, DC, Dec. 1993, pp. 71-74.
10. J. W. Matthews and A. E. Blakeslee, "Defects in epitaxial multilayers-Part I: Misfit dislocations in layers," J. Cryst. Growth, vol. 27, pp. 118-125, 1974.
11. _, "Defects in epitaxial multilayers-Part II: Dislocation pile-ups, threading dislocations, slip lines, and cracks," J. Cryst. Growth, vol. 32, pp. 265-273, 1975.
12. S. R. Stiffler, J. H. Comfort, C. L. Stanis, D. L. Harame, E. de Fresart, and B. S. Meyerson, "The thermal stability of SiGe films deposited by ultrahigh-vacuum chemical vapor deposition," J. Appl. Phys., vol. 70, pp. 1416-1420, 1991.
13. _, "Erratum: The thermal stability of SiGe films deposited by ultrahigh-vacuum chemical vapor deposition, J. Appl. Phys., vol. 70, p. 7194, 1991.
14. E. F. Crabbé, J. D. Cressler, G. L. Patton, J. M. C. Stork, J. H. Comfort, and J. Y.-C. Sun, "Current gain rolloff in graded-base SiGe heterojunction bipolar transistors," IEEE Electron Device Lett., vol. 14, pp. 193-195, Apr. 1993.
15. D. L. Harame, J. H. Comfort, J. D. Cressler, E. F. Crabbe, J. Y.-C. Sun, B. S. Meyerson, and T. Tice, "Si/SiGe epitaxial-base transistors-Part I: Material, physics, and circuits," IEEE Trans. Electron Devices, vol. 42, pp. 455-68, Mar. 1995.