On the origin of 1/f noise in polysilicon emitter bipolar transistors

Journal of Applied Physics

Volumn 85, Issue 2, 1999, Pages 1192-1195

  Deen, M Jamal ^a   Rumyantsev, S L ^b   Schroter, M ^c  

^a SIMON FRASER UNIVERSITY   (Canada)

^b IOFFE INSTITUTE   (Russian Federation)

^c Rockwell Semiconductor Systems   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001317838     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.369256     Document Type: Article

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