Noise modeling and SiGe profile design tradeoffs for RF applications

IEEE Transactions on Electron Devices

Volumn 47, Issue 11, 2000, Pages 2037-2044

  Niu, Guofu ^a  

^a AUBURN UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; FREQUENCY RESPONSE; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE MODELS; SPURIOUS SIGNAL NOISE;

FILM STABILITY; RADIO FREQUENCY CIRCUITS; SILICON GERMANIUM;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0034315783     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.877164     Document Type: Article

References (25)

1. D. C. Ahlgren et al., "Manufacturability demonstration of an integrated SiGe HBT technology for the analog and wireless marketplace," in 1EDM Tech. Dig.. 1996, pp. 859-862.
2. P. O. Lauritzen, "Noise due to generation and recombination of carriers in p-n junction transition regions," IEEE Trans. Electron Devices, vol. 15, pp. 770-776, Oct. 1968.
3. K. M. Van Vliet, "Noise sources in transport equations associated with ambipolar diffusion and Shockley-Read recombination," Solid-State Electron., vol. 13, pp. 649-657, May 1970.
4. E. G. Nielson, "Behavior of noise figure in junction transistors," Proc. IRE, vol. 45, pp. 957-963, July 1957.
5. A. van der Ziel, "Noise in solid-state devices and lasers," Proc. IEEE, vol. 58, pp. 1178-1206, Aug. 1970.
6. H. A. Haus et al, "Representation of noise in linear twoports," Proc. IRE, vol. 48, pp. 69-74, Jan. 1960.
7. H. Hillbrand and P. H. Russer, "An efficient method for computer aided noise analysis of linear amplifier networks," IEEE Trans. Circuits Syst., vol. CAS-23, pp. 235-238, Apr. 1976.
8. S. P. Voinigescu et al., "A scalable high-frequency noise model for bipolar transistors with application to optimal transistor sizing for low-noise amplifier design," IEEE J. Solid-State Circuits, vol. 32, pp. 1430-1438, Sept. 1997.
9. G. F. Niu et al., "Noise parameter optimization of UHV/CVD SiGe HBT's for RF and microwave applications," IEEE Trans. Electron Devices, vol. 46, pp. 1347-1354, Aug. 1999.
10. G. F. Niu et al., "A 2-D numerical simulation methodology for noise figure optimization in UHV/CVD SiGe HBT's," in Tech. Dig. IEEE Symp. Monolithic Integrated Circuits in RF Systems, 1998, pp. 253-257.
11. H. J. Osten, D. Knoll, B. Heinemann, and P. Schley, "Increasing processing margins in SiGe heterojunction bipolar technology by adding carbon," IEEE Trans. Electron Devices, vol. 46, pp. 1910-1912, 1999.
12. MEDICI 4.0, "2-D semiconductor device simulator," in Avant! TCAD, 1997.
13. P. Baureis and D. Seitzer, "Parameter extraction for HBT's temperature dependent large signal equivalent circuit model," in Tech. Dig. GaAs 1C Symp., 1993, pp. 263-266.
14. W. E. Ansley, J. D. Cressler, and D. M. Richey, "Base profile optimization for minimum noise figure in advanced UHV/CVD SiGe HBTs," IEEE Trans. Microwave Theory Tech., vol. 46, pp. 653-660, May 1998.
15. G. F. Niu et al, "SiGe profile design tradeoffs for RF circuit applications," in IEDM Tech. Dig., 1999, pp. 573-576.
16. A. J. Joseph, J. D. Cressler, D. M. Richey, and G. F. Niu, "Optimization of SiGe HBT's for operation at high current densities," IEEE Trans. Electron Devices, vol. 46, pp. 1347-1354, July 1999.
17. G. F. Niu and J. D. Cressler, "The impact of bandgap offset distribution between conduction and valence bands in Si-based graded bandgap HBT's," Solid-State Electron., pp. 2225-30, Dec. 1999.
18. S. R. Stiffler et al, "The thermal stability of SiGe films deposited by ultra-high-vacuum chemical vapor deposition," J. Appl. Phys., vol. 70, pp. 1416-1420, 1991. See also Erratum, vol. 70, p. 7194, 1991..
19. G. F. Niu et al., "Intermodulation characteristics of UHV/CVD SiGe HBT's," in Proc. IEEE BCTM, Sept. 1999, pp. 50-54.
20. B. Razavi, RF Microelectronics. Englewood Cliffs, NJ: Prentice-Hall, 1998.
21. N. B. Carvalho and J. C. Pedro, "Multi-tone intermodulation distortion performance of 3rd order microwave circuits," in Tech. Dig. IEEE Int. Symp. Microwave Theory and Techniques , June 1999, pp. 763-766.
22. "On the use of multi-tone techniques for assesing RF components' intermodulation distortion," IEEE Trans. Microwave Theory and Techniques, vol. 47, pp. 2393-2402, Dec. 1999.
23. V Aparin and C. Peroico, "Effect of out-of-band terminations on intermodulation in common-emitter circuits," in Dig. IEEEMTT-S, 1999, pp. 977-980.
24. N. King and A. Victor, "Enhanced wireless circuit performance with SiGe technology," IBM MicroNews, pp. 5-10, 1st qtr. 1999.
25. L. Sheng, J. Jensen, and L. Larson, "A Si/SiGe HBT sub-harmonic mixer/downconverter," in Proc. IEEE BCTM, 1999, pp. 71-74.